Datasheet > JANTXV2N7222U

JANTXV2N7222U

更新时间： 2023-12-06 20:13:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
7页	181K
描述
500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7222U with Hermetic Packaging

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JANTXV2N7222U 数据手册

PD - 91552C

IRFN440

JANTX2N7222U

JANTXV2N7222U

POWER MOSFET

SURFACE MOUNT(SMD-1)

REF:MIL-PRF-19500/596

500V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFN440

0.85 Ω

8.0A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

SMD-1

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Surface Mount

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

8.0

5.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

125

1.0

±20

700

8.0

12.5

3.5

W/°C

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

dv/dt

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

-55 to 150

Storage Temperature Range

Package Mounting Surface Temperature

Weight

^oC

STG

300(for 5 seconds)

2.6 (Typical)

For footnotes refer to the last page

www.irf.com

1/28/02

12 3 4 5 6 7

中文翻译

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JANTXV2N7222U 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N7228U	INFINEON	完全替代	POWER MOSFET SURFACE MOUNT(SMD-1)
IRFM440	INFINEON	完全替代	POWER MOSFET THRU-HOLE (TO-254AA)
2N7228	MICROSEMI	功能相似	N-CHANNEL MOSFET

与JANTXV2N7222U相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N7224	INFINEON	获取价格	REPETITIVE AVALANCHE RATED AND dv/dt RATED
JANTXV2N7224	MICROSEMI	获取价格	N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592
JANTXV2N72241N6036	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6036A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6036AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6036E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6072	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6072A	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6072AE3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
JANTXV2N72241N6072E3	MICROSEMI	获取价格	1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507

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