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JANTXV2N7222U PDF预览

JANTXV2N7222U

更新时间： 2024-11-19 14:56:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
7页 181K
描述
500V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - A JANTXV2N7222U with Hermetic Packaging

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中文翻译

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JANTXV2N7222U 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：compliant
风险等级：5.17其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：700 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：8 A最大漏极电流 (ID)：8 A
最大漏源导通电阻：0.95 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：32 A
认证状态：Qualified参考标准：MIL-19500/596
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

JANTXV2N7222U 数据手册

 浏览型号JANTXV2N7222U的Datasheet PDF文件第2页浏览型号JANTXV2N7222U的Datasheet PDF文件第3页浏览型号JANTXV2N7222U的Datasheet PDF文件第4页浏览型号JANTXV2N7222U的Datasheet PDF文件第5页浏览型号JANTXV2N7222U的Datasheet PDF文件第6页浏览型号JANTXV2N7222U的Datasheet PDF文件第7页 
PD - 91552C  
IRFN440  
JANTX2N7222U  
JANTXV2N7222U  
POWER MOSFET  
SURFACE MOUNT(SMD-1)  
REF:MIL-PRF-19500/596  
500V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFN440  
0.85 Ω  
8.0A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
SMD-1  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Surface Mount  
Dynamic dv/dt Rating  
n Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
8.0  
5.0  
32  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
125  
1.0  
±20  
700  
8.0  
12.5  
3.5  
W
W/°C  
V
D
C
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
GS  
E
AS  
mJ  
A
I
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
oC  
g
STG  
300(for 5 seconds)  
2.6 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
1/28/02  
1234567

中文翻译

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JANTXV2N7222U 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N7228U INFINEON

完全替代

 POWER MOSFET SURFACE MOUNT(SMD-1)
IRFM440 INFINEON

完全替代

 POWER MOSFET THRU-HOLE (TO-254AA)
2N7228 MICROSEMI

功能相似

 N-CHANNEL MOSFET

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