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JANTXV2N7222 PDF预览

JANTXV2N7222

更新时间: 2024-11-20 23:01:23
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英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 176K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

JANTXV2N7222 数据手册

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PD - 90492D  
IRFM440  
JANTX2N7222  
JANTXV2N7222  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
REF:MIL-PRF-19500/596  
500V, N-CHANNEL  
HEXFET® MOSFETTECHNOLOGY  
Product Summary  
Part Number  
RDS(on)  
ID  
IRFM440  
0.85 Ω  
8.0A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
8.0  
5.0  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
32  
DM  
@ T = 25°C  
P
125  
W
W/°C  
V
D
C
Linear Derating Factor  
1.0  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
700  
mJ  
A
AS  
I
8.0  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
12.5  
3.5  
mJ  
V/ns  
AR  
dv/dt  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( 0.063 in.(1.6mm) from case for 10s)  
9.3 (Typical)  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
2/6/02  

JANTXV2N7222 替代型号

型号 品牌 替代类型 描述 数据表
IRFM440 INFINEON

完全替代

POWER MOSFET THRU-HOLE (TO-254AA)
JANTX2N7228U INFINEON

类似代替

POWER MOSFET SURFACE MOUNT(SMD-1)
IRFM450 INFINEON

类似代替

POWER MOSFET THRU-HOLE (TO-254AA)

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