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JANTXV2N7222

更新时间： 2024-02-12 19:14:20

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	176K
描述
POWER MOSFET THRU-HOLE (TO-254AA)

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JANTXV2N7222 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	CHIP CARRIER, R-CBCC-N3	Reach Compliance Code：	compliant
风险等级：	5.17	其他特性：	HIGH RELIABILITY
雪崩能效等级（Eas）：	700 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏极电流 (Abs) (ID)：	8 A	最大漏极电流 (ID)：	8 A
最大漏源导通电阻：	0.95 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-CBCC-N3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	125 W	最大脉冲漏极电流 (IDM)：	32 A
认证状态：	Qualified	参考标准：	MIL-19500/596
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	NO LEAD
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

JANTXV2N7222 数据手册

PD - 90492D

IRFM440

JANTX2N7222

JANTXV2N7222

POWER MOSFET

THRU-HOLE (TO-254AA)

REF:MIL-PRF-19500/596

500V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM440

0.85 Ω

8.0A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

8.0

5.0

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

125

W/°C

Linear Derating Factor

1.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

700

8.0

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

3.5

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

2/6/02

12 3 4 5 6 7

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