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JANTXV2N7221D PDF预览

JANTXV2N7221D

更新时间: 2024-01-16 19:18:57
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 226K
描述
Power Field-Effect Transistor, 10A I(D), 400V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

JANTXV2N7221D 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code:unknown风险等级:5.82
雪崩能效等级(Eas):650 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-254AA
JESD-30 代码:R-MSFM-P3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified参考标准:MILITARY STANDARD (USA)
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

JANTXV2N7221D 数据手册

 浏览型号JANTXV2N7221D的Datasheet PDF文件第2页浏览型号JANTXV2N7221D的Datasheet PDF文件第3页浏览型号JANTXV2N7221D的Datasheet PDF文件第4页浏览型号JANTXV2N7221D的Datasheet PDF文件第5页浏览型号JANTXV2N7221D的Datasheet PDF文件第6页浏览型号JANTXV2N7221D的Datasheet PDF文件第7页 

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