Datasheet > JANTXV2N6898

JANTXV2N6898

更新时间： 2024-11-25 00:00:03

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页数	文件大小	规格书
24页	138K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 25A I(D) \| TO-204AE

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JANTXV2N6898 数据手册

This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be

slightly different in format due To electronic conversion processes. Actual technical content will be the same.

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 21 August 1999

INCH-POUND

MIL-PRF-19500/565B

21 May 1999

SUPERSEDING

MIL-S-19500/565A

7 October 1987

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL,

SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898

JAN, JANTX, JANTXV AND JANS

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and

TO-204AE for 2N6898 (formerly TO – 3).

1.3 Maximum ratings. Unless otherwise specified, T = +25°C.

Type

T and

= +25°C

T = +100°C

STG

V dc

100

V dc

100

V dc

±20

A dc

A(pk)

°C

-55 to +150

2N6895

2N6896

2N6897

2N6898

8.33

100

150

0.6

1.16

6.0

0.74

3.8

7.6

1.16

6.0

15.8

1/ Derate linearly T > +25°C – 2N6895 (0.067 W/°C), 2N6896 (0.48 W/°C), 2N6897 (0.8 W/°C), 2N6898 (1.2 W/°C).

P(rated)

2/ Derate above T = +25 °C according to the formula

I_D

where P(rated) = P – (T = -25) (W/°C) watts;

K = max r

DS(on)

at T =+150°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...24

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与JANTXV2N6898相关器件

型号	品牌	获取价格	描述	数据表
JANTXV2N6902	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 12A I(D) \| TO-204AA
JANTXV2N6904	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 8A I(D) \| TO-204AA
JANTXV2N6968	RENESAS	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,7.5A I(D),TO-213AA
JANTXV2N6987	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116,
JANTXV2N6987U	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 60V V(BR)CEO \| 600MA I(C) \| LLCC
JANTXV2N6988	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 4-Element, PNP, Silicon, TO-86,
JANTXV2N6988	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, CERAMIC
JANTXV2N6989	RAYTHEON	获取价格	Small Signal Bipolar Transistor, 4-Element, NPN, Silicon, TO-116,
JANTXV2N6989U		获取价格	Surface Mount Quad NPN Transistor
JANTXV2N6990	ETC	获取价格	TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 50V V(BR)CEO \| 800MA I(C) \| FP

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