Datasheet > JANS2N6845

JANS2N6845

更新时间： 2024-11-28 23:59:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
22页	131K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 4A I(D) \| TO-205AF

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JANS2N6845 数据手册

The documentation and process

conversion measures necessary to

comply with this revision shall be

completed by 22 March 1998.

INCH-POUND

MIL-PRF-19500/564E

22 December 1997

SUPERSEDING

MIL-S-19500/564D

9 December 1994

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TYPES 2N6849, 2N6849U, 2N6851 AND 2N6851U

JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC

This specification is approved for use by all Depart-

ments and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor.

Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product

assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39), 3 (LCC), and figures 4, 5, and 6 for JANHC and JANKC

die dimensions.

1.3 Maximum ratings. Unless otherwise specified, T = +25 C.

Type

T and

= +25 C

= +100 C

STG

V dc

A dc

A(pk)

2N6849

2N6851

0.8

-100

-200

-100

-200

-6.5

-4.0

-4.1

-2.4

-6.5

-4.0

-25

-20

-55 to +150

1/ Derate linearly 0.2 W/ C for T > +25 C.

- T

J max C

T_{J max}

) x (

T_C

I_D

(

)

R_θ

T_Jmax

DS_on

3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document

should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH

43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this

document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

12 3 4 5 6 7...22

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与JANS2N6845相关器件

型号	品牌	获取价格	描述	数据表
JANS2N6849	INFINEON	获取价格	POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
JANS2N6849	MICROSEMI	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Met
JANS2N6849U	MICROSEMI	获取价格	Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, M
JANS2N6849U	INFINEON	获取价格	-100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package - A JANS2N6849U with Hermetic
JANS2N6851	INFINEON	获取价格	HEXFET TRANSISTORS THRU-HOLE (TO-205AF)
JANS2N6851U	ETC	获取价格	-200V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package
JANS2N6987	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass
JANS2N6987/TR	MICROSEMI	获取价格	Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, Ceramic, Glass
JANS2N6987U	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, LCC-20
JANS2N6988	MICROSEMI	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, FP-14

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