Datasheet > IXTR90P20P

IXTR90P20P

更新时间： 2024-09-10 20:54:03

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	144K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTR90P20P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTR90P20P 数据手册

PolarP^TM

Power MOSFET

V_DSS= - 200V

I_D25= - 53A

IXTR90P20P

R_DS(on)



48m

P-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

- 200

V_DGR

Isolated Tab

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

- 53

G = Gate

S = Source

= Drain

- 270

I_A

T_C= 25C

- 90

3.5

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

Features

312

^Silicon chip on Direct-Copper Bond

(DCB) Substrate

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

- UL Recognized Package

- Isolated Mounting Surface

- 2500V~ Electrical Isolation

^Avalanche Rated

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

^Fast Intrinsic Diode

V_ISOL

M_d

50/60 H_Z, RMS t = 1min

Mounting Force

2500

20..120/4.5..27

N/lb

^The Rugged PolarP^TMProcess

^Low Q_G

^Low Drain-to-Tab Capacitance

^Low Package Inductance

Weight

Advantages



Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

- 200

- 2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250A

V_DS= V_GS, I_D= -1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 4.5

Applications

100 nA



High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment



I_DSS

- 50 A



T_J= 125C

- 250 A



R_DS(on)

V_GS= -10V, I_D= - 45A, Note 1

48 m



Current Regulators

DS99932D(6/16)

12 3 4 5 6

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