品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | / | |
页数 | 文件大小 | 规格书 |
7页 | 290K | |
描述 | ||
Power Field-Effect Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.71 |
Is Samacsys: | N | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH10N100D2 | IXYS |
获取价格 |
Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IXTH10N100D2 | LITTELFUSE |
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不同于增强型MOSFET,这些耗尽型器件在“常开”模式下运行,因此栅极引出线处需要的开启电 | |
IXTH10N60 | IXYS |
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10 AMP, 600V, 0.55-ohm / 0.7-ohm | |
IXTH10N60A | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-247 | |
IXTH10N80 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH10N90 | IXYS |
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Power Field-Effect Transistor, 10A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTH10N95 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH10P45 | ETC |
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TRANSISTOR | MOSFET | P-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-218VAR | |
IXTH10P50 | IXYS |
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Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated | |
IXTH10P50P | IXYS |
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PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated |