Datasheet > IXTH10N100D

IXTH10N100D

更新时间： 2024-11-24 14:51:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	290K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTH10N100D 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	Base Number Matches：	1

IXTH10N100D 数据手册

V_DSX= 1000V

I_D25= 10A

R_DS(on) 1.4

High Voltage

MOSFET

IXTH10N100D

IXTT10N100D

N-Channel, Depletion Mode

TO-268 (IXTT)

Symbol

V_DSX

Test Conditions

Maximum Ratings

D (Tab)

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1000

V_DGX

V_GSX

V_GSM

Continuous

Transient

30

40

TO-247 (IXTH)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

P_D

T_C= 25C

400

D (Tab)

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Weight

TO-268

TO-247

Features

• Normally ON Mode

• International Standard Packages

• Molding Epoxies meet UL94V-0

Flammability Classification

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25C, Unless Otherwise Specified)

Min.

1000

-1.5

Typ.

Max.

BV_DSX

V_GS(off)

I_GSX

V_GS= -10V, I_D= 250A

V_DS= 25V, I_D= 250A

V_GS= 30V, V_DS= 0V

V_DS= V_DSX, V_GS= -10V

• Easy to Mount

• Space Savings

• High Power Density

- 3.5

100 nA

25 A

I_DSX(off)

Applications

T_J= 125C

500 A

• Level Shifting

• Triggers

R_DS(on)

I_D(on)

V_GS= 10V, I_D= 10A, Note 1

V_GS= 0V, V_DS= 25V, Note 1

1.4



• Solid State Relays

• Current Regulators

• Active Load

1.0

DS99529D(8/17)

12 3 4 5 6 7

中文翻译

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