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IXTH10N100D PDF预览

IXTH10N100D

更新时间: 2024-11-05 14:51:43
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 290K
描述
Power Field-Effect Transistor,

IXTH10N100D 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Is Samacsys:NBase Number Matches:1

IXTH10N100D 数据手册

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VDSX = 1000V  
ID25 = 10A  
RDS(on) 1.4  
High Voltage  
MOSFET  
IXTH10N100D  
IXTT10N100D  
N-Channel, Depletion Mode  
TO-268 (IXTT)  
G
Symbol  
VDSX  
Test Conditions  
Maximum Ratings  
S
D (Tab)  
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
1000  
1000  
V
V
VDGX  
VGSX  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
10  
20  
A
A
G
PD  
TC = 25C  
400  
W
D
D (Tab)  
S
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
C  
C  
C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-268  
TO-247  
4
6
g
g
Features  
• Normally ON Mode  
International Standard Packages  
• Molding Epoxies meet UL94V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
1000  
-1.5  
Typ.  
Max.  
BVDSX  
VGS(off)  
IGSX  
VGS = -10V, ID = 250A  
VDS = 25V, ID = 250A  
VGS = 30V, VDS = 0V  
VDS = VDSX, VGS = -10V  
V
V
• Easy to Mount  
• Space Savings  
• High Power Density  
- 3.5  
100 nA  
25 A  
IDSX(off)  
Applications  
TJ = 125C  
500 A  
• Level Shifting  
• Triggers  
RDS(on)  
ID(on)  
VGS = 10V, ID = 10A, Note 1  
VGS = 0V, VDS = 25V, Note 1  
1.4  
• Solid State Relays  
• Current Regulators  
• Active Load  
1.0  
A
DS99529D(8/17)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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