Datasheet > IXTA80N10T

IXTA80N10T

更新时间： 2024-11-02 12:25:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	190K
描述
TrenchMVTM Power MOSFET

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中文翻译

获取价格

数据手册

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IXTA80N10T 数据手册

TrenchMV^TM

Power MOSFET

V_DSS= 100V

I_D25= 80A

IXTA80N10T

IXTP80N10T

R_DS(on)≤ 14mΩ

N-Channel Enhancement Mode

Avalanche Rated

TO-263 AA (IXTA)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

D (Tab)

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

TO-220AB (IXTP)

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

220

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

= Drain

I_A

E_AS

T_C= 25°C

400

G = Gate

S = Source

P_D

T_C= 25°C

230

Tab = Drain

dV/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^zInternational Standard Packages

^z175°C Operating Temperature

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zHigh Current Handling Capability

^zFast Intrinsic Diode

M_d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-263

TO-220

2.5

3.0

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Automotive

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 100μA

V_GS= ± 20V, V_DS= 0V

V_DS= 105V, V_GS= 0V

105

- Motor Drives

- DC/DC Conversion

- 42V Power Bus

2.5

5.0

± 200 nA

μA

- ABS Systems

DC/DC Converters and Off-Line UPS

Primary Switch for 24V and 48V

I_DSS

T_J= 150°C

150 μA

Systems

High Current Switching Applications

Distributed Power Architechtures

R_DS(on)

V_GS= 10V, I_D= 25A, Note 1 & 2

14 mΩ

and VRMs

Electronic Valve Train Systems

DS99648A(11/09)

12 3 4 5

中文翻译

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