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IXTA96P085T PDF预览

IXTA96P085T

更新时间: 2024-11-03 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关驱动高压
页数 文件大小 规格书
7页 215K
描述
Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱动电路,避免使用N通道MOSFET通常涉及的额外“高压侧”驱动电路。 这让设计人员可以减少元件数量,从而简

IXTA96P085T 数据手册

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TrenchPTM  
Power MOSFETs  
VDSS = - 85V  
ID25 = - 96A  
IXTA96P085T  
IXTP96P085T  
IXTH96P085T  
RDS(on)  
13mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 85  
- 85  
V
V
VDGR  
G
D
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25°C  
- 96  
A
A
TC = 25°C, Pulse Width Limited by TJM  
- 300  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 48  
1
A
J
G
D
S
D (Tab)  
PD  
TC = 25°C  
298  
W
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 85  
V
- 2.0  
- 4.0  
V
Applications  
±100 nA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 10 μA  
- 750 μA  
z
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
13 mΩ  
z
z
DS100025B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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