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IXTA80N10T7 PDF预览

IXTA80N10T7

更新时间: 2024-11-02 21:12:43
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 163K
描述
Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

IXTA80N10T7 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G6Reach Compliance Code:not_compliant
风险等级:5.71其他特性:AVALANCHE RATED
雪崩能效等级(Eas):400 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
湿度敏感等级:2元件数量:1
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTA80N10T7 数据手册

 浏览型号IXTA80N10T7的Datasheet PDF文件第2页浏览型号IXTA80N10T7的Datasheet PDF文件第3页浏览型号IXTA80N10T7的Datasheet PDF文件第4页浏览型号IXTA80N10T7的Datasheet PDF文件第5页 
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
VDSS = 100  
ID25 = 80  
RDS(on) 14 mΩ  
V
A
IXTA80N10T7  
N-ChannelEnhancementMode  
AvalancheRated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (7-lead) (IXTA..7)  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
100  
100  
V
V
VGSM  
Transient  
± 30  
V
1
ID25  
IDM  
TC = 25°C  
80  
220  
A
A
7
TC = 25°C, pulse width limited by TJM  
(TAB)  
Pin-out:1 - Gate  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
400  
A
mJ  
2, 3 - Source  
4 - NC (cut)  
5,6,7 - Source  
TAB (8) - Drain  
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 175°C, RG = 15 Ω  
3
V/ns  
TC = 25°C  
230  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Weight  
3
g
Advantages  
Easy to mount  
Space savings  
High power density  
Applications  
Automotive  
- Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 100 μA  
VGS = ± 20 V, VDS = 0 V  
100  
V
V
- 42V Power Bus  
- ABS Systems  
2.5  
4.5  
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
± 200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
Distributed Power Architechtures  
TJ = 150°C  
150  
and VRMs  
Electronic Valve Train Systems  
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
11.5  
14 mΩ  
High Current Switching  
Applications  
High Voltage Synchronous Recifier  
DS99706 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

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