Datasheet > IXTB30N100L

IXTB30N100L

更新时间： 2024-09-15 14:56:27

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	175K
描述
当功率MOSFET用于线性模式工作时，相对于传统的开关模式具有相当高的热应力和电应力，这是因为同时发生高漏极电压和电流；这些极端应力会造成普通设备出现故障。 IXYS Linear MOSFET旨

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技术参数
数据手册

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IXTB30N100L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTB30N100L 数据手册

Linear^TMPower MOSFET

w/ Extended FBSOA

V_DSS= 1000V

I_D25= 30A

IXTB30N100L

R_DS(on)≤ 450mΩ

N-Channel Enhancement Mode

Avalanche Rated

PLUS264^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

Tab

V_DGR

G = Gate

= Drain

V_GSS

V_GSM

Continuous

Transient

±30

±40

= Source

Tab = Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

Features

I_A

T_C= 25°C

E_AS

• Designed for Linear Operation

• Avalanche Rated

P_D

T_C= 25°C

800

• Molding Epoxy Meets UL94 V-0

Flammability Classification

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Advantages

• Easy to Mount

• Space Savings

• High Power Density

F_C

Mounting Force

30..120/6.7..27

N/lb.

Weight

Applications

• Programmable Loads

• Current Regulators

• DC-DC Converters

• Battery Chargers

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

3.0

Typ.

Max.

• DC Choppers

• Temperature and Lighting Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.5

±200 nA

I_DSS

50 μA

T_J= 125°C

1 mA

R_DS(on)

V_GS= 20V, I_D= 0.5 • I_DSS, Note 1

450 mΩ

DS99501C(11/12)

12 3 4 5 6

中文翻译

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