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IXTA86N20T-TRL PDF预览

IXTA86N20T-TRL

更新时间: 2024-11-07 19:38:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 301K
描述
Power Field-Effect Transistor,

IXTA86N20T-TRL 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXTA86N20T-TRL 数据手册

 浏览型号IXTA86N20T-TRL的Datasheet PDF文件第2页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第3页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第4页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第5页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第6页 
Trench Gate  
Power MOSFET  
VDSS = 200V  
ID25 = 86A  
RDS(on) 33m  
IXTA86N20T  
IXTP86N20T  
IXTQ86N20T  
N-Channel Enhancement Mode  
Avalance Rated  
TO-263  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
200  
200  
V
V
G
D
VDGR  
TJ = 25C to 175C, RGS = 1M  
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-3P  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
86  
A
A
260  
G
D
S
IA  
TC = 25C  
TC = 25C  
10  
1
A
J
D (Tab)  
EAS  
PD  
TC = 25C  
550  
3
W
G = Gate  
D
= Drain  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
High Current Handling Capability  
Avalanche Rated  
Fast Intrinsic rectifier  
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-3P)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
g
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
High Speed Power Switching  
3.0  
5.0  
200 nA  
A  
IDSS  
1
TJ = 125C  
250 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
33 m  
Applications  
DS99664A(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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