5秒后页面跳转
IXTA86N20T-TRL PDF预览

IXTA86N20T-TRL

更新时间: 2024-11-18 19:38:07
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 301K
描述
Power Field-Effect Transistor,

IXTA86N20T-TRL 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.71
Base Number Matches:1

IXTA86N20T-TRL 数据手册

 浏览型号IXTA86N20T-TRL的Datasheet PDF文件第2页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第3页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第4页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第5页浏览型号IXTA86N20T-TRL的Datasheet PDF文件第6页 
Trench Gate  
Power MOSFET  
VDSS = 200V  
ID25 = 86A  
RDS(on) 33m  
IXTA86N20T  
IXTP86N20T  
IXTQ86N20T  
N-Channel Enhancement Mode  
Avalance Rated  
TO-263  
G
S
D (Tab)  
TO-220 (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25C to 175C  
200  
200  
V
V
G
D
VDGR  
TJ = 25C to 175C, RGS = 1M  
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
TO-3P  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
86  
A
A
260  
G
D
S
IA  
TC = 25C  
TC = 25C  
10  
1
A
J
D (Tab)  
EAS  
PD  
TC = 25C  
550  
3
W
G = Gate  
D
= Drain  
dv/dt  
IS IDM, VDD VDSS, TJ 150°C  
V/ns  
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
High Current Handling Capability  
Avalanche Rated  
Fast Intrinsic rectifier  
Low RDS(on)  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220 & TO-3P)  
10..65 / 2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
g
g
g
Advantages  
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
High Speed Power Switching  
3.0  
5.0  
200 nA  
A  
IDSS  
1
TJ = 125C  
250 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
33 m  
Applications  
DS99664A(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

与IXTA86N20T-TRL相关器件

型号 品牌 获取价格 描述 数据表
IXTA86N20X4 LITTELFUSE

获取价格

说明: 功能与特色: 应用:
IXTA88N085T7 LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTA8N50P IXYS

获取价格

PolarHV Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTA8N50P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTA8N65X2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTA8N65X2 IXYS

获取价格

Power Field-Effect Transistor,
IXTA8N70X2 LITTELFUSE

获取价格

这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的
IXTA90N055T IXYS

获取价格

Power Field-Effect Transistor, 90A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Me
IXTA90N055T2 IXYS

获取价格

DC to DC Synchronous Converter Design
IXTA90N055T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能