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IXTA80N12T2 PDF预览

IXTA80N12T2

更新时间: 2024-11-02 21:12:35
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 204K
描述
Power Field-Effect Transistor, 80A I(D), 120V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263AA, 3 PIN

IXTA80N12T2 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, TO-263AA, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.75
其他特性:AVALANCHE RATED雪崩能效等级(Eas):400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:120 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.017 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):325 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTA80N12T2 数据手册

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TrenchT2TM  
Power MOSFETs  
VDSS = 120V  
ID25 = 80A  
RDS(on) 17m  
IXTA80N12T2  
IXTP80N12T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
120  
120  
V
V
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
80  
A
A
G
TC = 25C, Pulse Width Limited by TJM  
200  
D
D (Tab)  
= Drain  
S
IA  
TC = 25C  
TC = 25C  
TC = 25C  
40  
400  
325  
A
mJ  
W
EAS  
PD  
G = Gate  
D
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Fast Intrinsic Rectifier  
High Current Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 100A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
120  
2.5  
V
V
4.5  
            200 nA  
A  
Applications  
IDSS  
5
Synchronous Rectification  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
175  A  
17 m  
RDS(on)  
DS100240A(8/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

IXTA80N12T2 替代型号

型号 品牌 替代类型 描述 数据表
STW80NF12 STMICROELECTRONICS

功能相似

N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-

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