Datasheet > IXTA98N075T

IXTA98N075T

更新时间： 2024-09-15 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
3页	154K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(ON)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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数据手册

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IXTA98N075T 数据手册

Advance Technical Information

TrenchMV^TM

Power MOSFET

IXTA98N075T

IXTP98N075T

V_DSS= 75

I_D25= 98

R_DS(on)≤ 10 mΩ

N-Channel Enhancement Mode

TO-263 (IXTA)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

V_DGR

T_J= 25°C to 175°C; R_GS= 1 MΩ

TAB

V_GSM

Transient

I_D25

I_LRMS

I_DM

T_C= 25°C

Package Current Limit (RMS):

T_C= 25°C, pulse width limited by T_JM

TO-220 (IXTP)

280

TAB

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 175°C, R_G= 5 Ω

V/ns

I_AR

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

E_AS

600

P_d

T_C= 25°C

230

T_J

-55 ... +175

175

°C

T_JM

T_stg

Features

^ꢀUltra-low On Resistance

^ꢀUnclamped Inductive Switching (UIS)

rated

^ꢀLow package inductance

- easy to drive and to protect

^ꢀ175 °C Operating Temperature

-40 ... +175

T_L

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 seconds

300

260

°C

T_SOLD

M_d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Weight

TO-220

TO-263

3.0

2.5

Advantages

ꢀ

Easy to mount

Space savings

ꢀ

Symbol

Test Conditions

Characteristic Values

ꢀ

High power density

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

Applications

Automotive

- Motor Drives

- 42V Power Bus

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 100 μA

V_GS= 20 V, V_DS= 0 V

ꢀ

2.0

4.0

200

- ABS Systems

ꢀ

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

I_DSS

V_DS= V_DSS

V_GS= 0 V

150

μA

ꢀ

T_J= 150°C

Systems

High Current Switching

R_DS(on)

V_GS= 10 V, I_D= 25 A, Notes 1, 2

10 mΩ

ꢀ

Applications

DS99541(04/07)

12 3

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