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IXTB62N50L

更新时间: 2024-09-14 20:08:43
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 148K
描述
Power Field-Effect Transistor, 62A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS264, 3 PIN

IXTB62N50L 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:PLUS264, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:8.51
其他特性:AVALANCHE RATED雪崩能效等级(Eas):5000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):62 A
最大漏极电流 (ID):62 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):800 W最大脉冲漏极电流 (IDM):150 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTB62N50L 数据手册

 浏览型号IXTB62N50L的Datasheet PDF文件第2页浏览型号IXTB62N50L的Datasheet PDF文件第3页浏览型号IXTB62N50L的Datasheet PDF文件第4页浏览型号IXTB62N50L的Datasheet PDF文件第5页 
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 500V  
ID25 = 62A  
RDS(on) 100mΩ  
IXTB62N50L  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
TJ = 25°C to 150°C  
500  
V
V
V
V
S
Tab  
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
500  
± 30  
± 40  
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
Transient  
ID25  
IDM  
TC = 25°C  
62  
A
A
TC = 25°C, Pulse Width Limited by TJM  
150  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
A
J
EAS  
PD  
5
800  
Features  
W
z
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
°C  
°C  
N/lb.  
g
Fast Intrinsic Diode  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
z
z
z
TJM  
Tstg  
TL  
-55 ... +150  
300  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
TSOLD  
FC  
260  
Advantages  
Mounting Force  
30..120/6.7..27  
10  
z
High Power Density  
Easy to Mount  
Space Savings  
Weight  
z
z
Applications  
z
Programmable Loads  
DC-DC Converters  
Current Regulators  
Battery Chargers  
DC Choppers  
Temperature and Lighting  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ. Max.  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
z
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
5.5  
Controls  
± 200 nA  
50 μA  
IDSS  
TJ = 125°C  
1
mA  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25, Note 1  
100 mΩ  
DS99336B(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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