是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | ISOPLUS220, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 145 A |
最大漏源导通电阻: | 0.0036 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 600 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTC36P15P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, | |
IXTC62N15P | IXYS |
获取价格 |
Power Field-Effect Transistor, 36A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IXTC75N10 | IXYS |
获取价格 |
N-Channel Enhancement Mode | |
IXTC96N25T | IXYS |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 250V, 0.031ohm, 1-Element, N-Channel, Silicon, Me | |
IXTD01N100D-1M | LITTELFUSE |
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Power Field-Effect Transistor, 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD02N50D-1M | LITTELFUSE |
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Power Field-Effect Transistor, 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IXTD100N25P-8S | IXYS |
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Power Field-Effect Transistor, 250V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD102N30P-88 | IXYS |
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Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD10N100 | MICROSEMI |
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Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Met | |
IXTD10P50 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |