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IXTC280N055T PDF预览

IXTC280N055T

更新时间: 2024-11-21 21:18:03
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 181K
描述
Power Field-Effect Transistor, 145A I(D), 55V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN

IXTC280N055T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ISOPLUS220, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.82
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (ID):145 A
最大漏源导通电阻:0.0036 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):600 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTC280N055T 数据手册

 浏览型号IXTC280N055T的Datasheet PDF文件第2页浏览型号IXTC280N055T的Datasheet PDF文件第3页浏览型号IXTC280N055T的Datasheet PDF文件第4页浏览型号IXTC280N055T的Datasheet PDF文件第5页 
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTC280N055T  
VDSS = 55  
ID25 = 145  
RDS(on) 3.6 mΩ  
V
A
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220 (IXTC)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
145  
75  
600  
A
A
A
G
D
S
Package Current Limit, RMS  
Isolated back surface  
TC = 25°C, pulse width limited by TJM  
G = Gate  
S = Source  
D = Drain  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
1.5  
A
J
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 175°C, RG = 3.3 Ω  
3
V/ns  
Features  
Ultra-low On Resistance  
Unclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
160  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Low package inductance  
- easy to drive and to protect  
175 °C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Easy to mount  
VISOL  
50/60 Hz, t = 1 minute, IISOL < 1 mA, RMS  
Mounting force  
2500  
V
Space savings  
FC  
11..65/2.5..15  
2
N/lb.  
g
High power density  
Weight  
Applications  
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- ABS Systems  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
55  
V
V
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
2.0  
4.0  
High Current Switching  
Applications  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25 μA  
250 μA  
TJ = 150°C  
RDS(on)  
VGS = 10 V, ID = 50 A, Notes 1, 2  
2.9  
3.6 mΩ  
DS99629 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  

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