是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.76 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏源导通电阻: | 0.06 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 元件数量: | 1 |
工作模式: | ENHANCEMENT MODE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 认证状态: | Not Qualified |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTD52N30P-6S | IXYS |
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Power Field-Effect Transistor, 300V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD74N20P-6S | IXYS |
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Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD8P50-5B | LITTELFUSE |
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Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IXTE10C40X4U | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 10A I(D) | |
IXTE10C50X4U | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 10A I(D) | |
IXTE10N60X4 | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 10A I(D) | |
IXTE10N60X4U | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 10A I(D) | |
IXTE12N50X4 | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D) | |
IXTE12N50X4U | ETC |
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TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D) | |
IXTE14N40X4 | ETC |
获取价格 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 14A I(D) |