5秒后页面跳转
IXTD50P10-7B PDF预览

IXTD50P10-7B

更新时间: 2024-11-21 19:39:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关晶体管
页数 文件大小 规格书
1页 38K
描述
Power Field-Effect Transistor, 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.348 X 0.283 INCH, DIE

IXTD50P10-7B 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.76配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR元件数量:1
工作模式:ENHANCEMENT MODE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL认证状态:Not Qualified
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTD50P10-7B 数据手册

  
N-Channel Depletion Mode MOSFET  
Depletion Mode MOSFETs  
Chip size  
Type  
VDSS  
max.  
RDSon  
max.  
Chip  
type  
Source -  
bond wire  
Equivalent  
device  
Depletion mode MOSFETs, unlike the regular enhancement  
type MOSFETs, requires a negative gate bias to turn it off.  
Consequently they remain on at or above zero gate bias  
voltage but otherwise have similar MOSFET characteristics.  
Their Rds(on) and breakdown voltage have a positive  
temperature coefficient, increasing the gate bias voltage  
increases the gate channel conductivity and so decreases  
Rds(on) to some extent and there is a usable intrinsic  
diode. IXYS Corporation’s IXTP01N100D is a depletion  
mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA  
and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other  
dimensions  
recommended  
data sheet  
V
mm  
mils  
IXTD 02N50D-1M  
IXTD 01N100D-1M  
500  
30  
1M  
1M  
1.96 x 1.68  
1.96 x 1.68  
77 x 66  
3 mil x 1  
3 mil x 1  
IXTP 02N50D  
IXTP 01N100D  
1000  
110  
77 x 66  
depletion mode MOSFET, IXTP02N05D, is rated at VDSS  
=
500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The  
minimum required gate bias to turn them off is –5 Volts.  
They are both housed in TO-220 package and can dissipate  
25 Watts at TC = 250C.  
There are many applications in which IXTP01N100D and  
IXTP02N05D can be used: current regulators, off-line  
linear regulators, input transient voltage suppressors, input  
current inrush limiters, solid state relays etc.  
P-Channel Power MOSFET  
Type  
VDSS  
RDS(ON)  
max.  
Chip  
type  
Chip size  
dimensions  
Source -  
bond wire  
Equivalent  
device  
max.  
recommended  
data sheet  
V
mm  
mils  
100  
0.08  
0.06  
IXTD36P10-5B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH36P10  
IXTH50P10  
IXTD50P10-7B  
200  
500  
0.22  
0.16  
IXTD16P20-5B  
IXTD24P20-7B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH16P20  
IXTH24P20  
1.20  
0.75  
1.05  
IXTD8P50-5B  
IXTD11P50-7B  
IXTD10P60-7B  
5B  
7B  
7B  
6.58 x 6.58  
8.84 x 7.18  
8.84 x 7.18  
259 x 259  
348 x 283  
348 x 283  
12 mil x 3  
15 mil x 3  
15 mil x 3  
IXTH7P50  
IXTH11P50  
IXTH10P60  
© 2004 IXYS All rights reserved  
12  

与IXTD50P10-7B相关器件

型号 品牌 获取价格 描述 数据表
IXTD52N30P-6S IXYS

获取价格

Power Field-Effect Transistor, 300V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD74N20P-6S IXYS

获取价格

Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD8P50-5B LITTELFUSE

获取价格

Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IXTE10C40X4U ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 10A I(D)
IXTE10C50X4U ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 10A I(D)
IXTE10N60X4 ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 10A I(D)
IXTE10N60X4U ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 10A I(D)
IXTE12N50X4 ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D)
IXTE12N50X4U ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 12A I(D)
IXTE14N40X4 ETC

获取价格

TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 400V V(BR)DSS | 14A I(D)