Datasheet > IXTF1N250

IXTF1N250

更新时间： 2023-12-06 20:13:18

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	354K
描述
超高电压系列的N通道标准MOSFET专为要求严苛的快速切换电源转换应用设计，这类应用需要高达4.5kV的阻断电压。凭借通态电压的正温度系数，这种超高电压MOSFET适合并联工作，相比串联低压MO

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数据手册

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IXTF1N250 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS= 2500V

I_D25= 1A

R_DS(on)≤ 40Ω

IXTF1N250

N-Channel Enhancement Mode

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

2500

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

1 = Gate

2 = Source

5 = Drain

P_D

T_C= 25°C

110

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

^zIsolated Mounting Surface

^z2500V Electrical Isolation

^zMolding Epoxies meet UL 94 V-0

Flammability Classification

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

M_d

Mounting Force

50/60Hz, 1min

20..120 / 4.5..27

Nm/lb.in.

V_ISOL

Weight

2500

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

2500

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250µA

V_DS= V_GS, I_D= 250µA

V_GS= ±20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

Applications

4.0

^zHigh Voltage Power Supplies

^zCapacitor Discharge

^zPulse Circuits

±100 nA

I_DSS

25 µA

µA

Note 2, T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

Ω

DS100222(12/09)

12 3 4 5

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