Datasheet > IXTF1N400

IXTF1N400

更新时间： 2024-01-09 16:30:23

品牌	Logo	应用领域
IXYS		高压
页数	文件大小	规格书
4页	152K
描述
High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode

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中文翻译

获取价格

数据手册

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IXTF1N400 数据手册

High Voltage

Power MOSFET

V_DSS

I_D25

= 4000V

= 1A

IXTF1N400

R_DS(on)≤ 60Ω

(Electrically Isolated Tab)

N-Channel Enhancement Mode

ISOPLUS i4-Pak^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

4000

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

Isolated Tab

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

1 = Gate

5 = Drain

2 = Source

P_D

T_C= 25°C

160

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

4000V~ Electrical Isolation

Molding Epoxies meet UL 94 V-0

Flammability Classification

F_C

Mounting Force

20..120 / 4.5..27

N/lb.

V_ISOL

Weight

50/60Hz, 1 Minute

4000

Advantages

Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings

High Power Density

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ. Max.

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

2.0

4.0

±100 nA

Applications

I_DSS

V_DS= 3.2kV, V_GS= 0V

V_DS= 4.0kV

V_DS= 3.2kV

50 μA

250 μA

μA

High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Note 2, T_J= 100°C

250

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

Laser and X-Ray Generation Systems

DS100159D(01/12)

12 3 4

中文翻译

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