Datasheet > IXTF1R4N450

IXTF1R4N450

更新时间： 2024-10-01 19:56:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	192K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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IXTF1R4N450 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	8.33	Base Number Matches：	1

IXTF1R4N450 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 4500V

= 1.4A

IXTF1R4N450

R_DS(on) 40

(Electrically Isolated Tab)

ISOPLUS i4-Pak^TM

N-Channel Enhancement Mode

Symbol

V_DSS

Test Conditions

Maximum Ratings

Isolated Tab

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

4500

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

1 = Gate

2 = Source

5 = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

1.4

4.2

P_D

T_C= 25C

190

Features

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

4500V~ Electrical Isolation

Molding Epoxies meet UL 94 V-0

Flammability Classification



T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

C

F_C

Mounting Force

20..120 / 4.5..27

N/lb

V_ISOL

Weight

50/60Hz, 1 Minute

4500

Advantages



High Voltage Package

Easy to Mount

Space Savings

High Power Density



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ. Max.

Applications

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

4.0

6.0



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

100 nA

A



I_DSS

V_DS= 3.6kV, V_GS= 0V

V_DS= 4.5kV



Laser and X-Ray Generation Systems

25 μA

V_DS= 3.6kV

Note 2, T_J= 100C

μA

R_DS(on)

V_GS= 10V, I_D= 50mA, Note 1



DS100710(02/16)

12 3 4 5

中文翻译

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