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IXTD01N100D-1M

更新时间： 2023-12-18 00:00:00
品牌 Logo 应用领域
力特 - LITTELFUSE 开关晶体管
页数 文件大小 规格书
1页 38K
描述
Power Field-Effect Transistor, 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.077 X 0.077 INCH, DIE

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IXTD01N100D-1M 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.39配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：1000 V最大漏源导通电阻：110 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR元件数量：1
工作模式：DEPLETION MODE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IXTD01N100D-1M 数据手册

  
N-Channel Depletion Mode MOSFET  
Depletion Mode MOSFETs  
Chip size  
Type  
VDSS  
max.  
RDSon  
max.  
Chip  
type  
Source -  
bond wire  
Equivalent  
device  
Depletion mode MOSFETs, unlike the regular enhancement  
type MOSFETs, requires a negative gate bias to turn it off.  
Consequently they remain on at or above zero gate bias  
voltage but otherwise have similar MOSFET characteristics.  
Their Rds(on) and breakdown voltage have a positive  
temperature coefficient, increasing the gate bias voltage  
increases the gate channel conductivity and so decreases  
Rds(on) to some extent and there is a usable intrinsic  
diode. IXYS Corporation’s IXTP01N100D is a depletion  
mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA  
and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other  
dimensions  
recommended  
data sheet  
V
Ω
mm  
mils  
IXTD 02N50D-1M  
IXTD 01N100D-1M  
500  
30  
1M  
1M  
1.96 x 1.68  
1.96 x 1.68  
77 x 66  
3 mil x 1  
3 mil x 1  
IXTP 02N50D  
IXTP 01N100D  
1000  
110  
77 x 66  
depletion mode MOSFET, IXTP02N05D, is rated at VDSS  
=
500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The  
minimum required gate bias to turn them off is –5 Volts.  
They are both housed in TO-220 package and can dissipate  
25 Watts at TC = 250C.  
There are many applications in which IXTP01N100D and  
IXTP02N05D can be used: current regulators, off-line  
linear regulators, input transient voltage suppressors, input  
current inrush limiters, solid state relays etc.  
P-Channel Power MOSFET  
Type  
VDSS  
RDS(ON)  
max.  
Chip  
type  
Chip size  
dimensions  
Source -  
bond wire  
Equivalent  
device  
max.  
recommended  
data sheet  
V
Ω
mm  
mils  
100  
0.08  
0.06  
IXTD36P10-5B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH36P10  
IXTH50P10  
IXTD50P10-7B  
200  
500  
0.22  
0.16  
IXTD16P20-5B  
IXTD24P20-7B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH16P20  
IXTH24P20  
1.20  
0.75  
1.05  
IXTD8P50-5B  
IXTD11P50-7B  
IXTD10P60-7B  
5B  
7B  
7B  
6.58 x 6.58  
8.84 x 7.18  
8.84 x 7.18  
259 x 259  
348 x 283  
348 x 283  
12 mil x 3  
15 mil x 3  
15 mil x 3  
IXTH7P50  
IXTH11P50  
IXTH10P60  
© 2004 IXYS All rights reserved  
12  
1

中文翻译

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与IXTD01N100D-1M相关器件

型号 品牌 获取价格 描述 数据表
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IXTD10P60-7B LITTELFUSE

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 		Power Field-Effect Transistor, 500V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide S
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 		Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide S
IXTD120N15P-7S IXYS

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 		Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD120N20P-8S IXYS

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 		Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD120N25P-88 IXYS

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 		Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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