型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTD120N20P-8S | IXYS |
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Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD120N25P-88 | IXYS |
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Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD12N90-7L | IXYS |
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Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXTD16P20-5B | LITTELFUSE |
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Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD170N10P-8S | IXYS |
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Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD180N15P-88 | IXYS |
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Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD200N10P-88 | IXYS |
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Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD21N50 | MICROSEMI |
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Power Field-Effect Transistor, 21A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTD24N50-7X | IXYS |
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Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD24P20-7B | LITTELFUSE |
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Power Field-Effect Transistor, 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide S |