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IXTD24N50-7X PDF预览

IXTD24N50-7X

更新时间: 2024-11-21 14:34:03
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
1页 277K
描述
Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

IXTD24N50-7X 技术参数

是否无铅:不含铅生命周期:Transferred
零件包装代码:DIE包装说明:UNCASED CHIP, R-XUUC-N3
针数:3Reach Compliance Code:unknown
风险等级:5.76Is Samacsys:N
其他特性:MEGAFET配置:SINGLE
最小漏源击穿电压:500 V最大漏源导通电阻:0.23 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUUC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IXTD24N50-7X 数据手册

  

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