是否无铅: | 不含铅 | 生命周期: | Transferred |
零件包装代码: | DIE | 包装说明: | UNCASED CHIP, R-XUUC-N3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.76 | Is Samacsys: | N |
其他特性: | MEGAFET | 配置: | SINGLE |
最小漏源击穿电压: | 500 V | 最大漏源导通电阻: | 0.23 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUUC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTD24P20-7B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD36N30P-5S | IXYS |
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Power Field-Effect Transistor, 300V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD36P10-5B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD40N30 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Me | |
IXTD50N20 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met | |
IXTD50N20P-5S | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD50P10-7B | LITTELFUSE |
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Power Field-Effect Transistor, 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD52N30P-6S | IXYS |
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Power Field-Effect Transistor, 300V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD74N20P-6S | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD8P50-5B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 500V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se |