5秒后页面跳转
捷配首页

Datasheet > IXTD16P20-5B
IXTD16P20-5B PDF预览

IXTD16P20-5B

更新时间： 2024-11-02 19:39:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关晶体管
页数 文件大小 规格书
1页 38K
描述
Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.259 X 0.259 INCH, DIE

阅读下载

中文翻译

获取价格

IXTD16P20-5B 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.39配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏源导通电阻：0.22 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR元件数量：1
工作模式：ENHANCEMENT MODE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL认证状态：Not Qualified
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IXTD16P20-5B 数据手册

  
N-Channel Depletion Mode MOSFET  
Depletion Mode MOSFETs  
Chip size  
Type  
VDSS  
max.  
RDSon  
max.  
Chip  
type  
Source -  
bond wire  
Equivalent  
device  
Depletion mode MOSFETs, unlike the regular enhancement  
type MOSFETs, requires a negative gate bias to turn it off.  
Consequently they remain on at or above zero gate bias  
voltage but otherwise have similar MOSFET characteristics.  
Their Rds(on) and breakdown voltage have a positive  
temperature coefficient, increasing the gate bias voltage  
increases the gate channel conductivity and so decreases  
Rds(on) to some extent and there is a usable intrinsic  
diode. IXYS Corporation’s IXTP01N100D is a depletion  
mode MOSFET rated at VDSS = 1000 Volts and ID = 100 mA  
and its RDS(on) = 110 Ohms at VGS = 0 Volt. The other  
dimensions  
recommended  
data sheet  
V
Ω
mm  
mils  
IXTD 02N50D-1M  
IXTD 01N100D-1M  
500  
30  
1M  
1M  
1.96 x 1.68  
1.96 x 1.68  
77 x 66  
3 mil x 1  
3 mil x 1  
IXTP 02N50D  
IXTP 01N100D  
1000  
110  
77 x 66  
depletion mode MOSFET, IXTP02N05D, is rated at VDSS  
=
500 Volts, ID = 200 mA, while its RDS(on) = 30 Ohms. The  
minimum required gate bias to turn them off is –5 Volts.  
They are both housed in TO-220 package and can dissipate  
25 Watts at TC = 250C.  
There are many applications in which IXTP01N100D and  
IXTP02N05D can be used: current regulators, off-line  
linear regulators, input transient voltage suppressors, input  
current inrush limiters, solid state relays etc.  
P-Channel Power MOSFET  
Type  
VDSS  
RDS(ON)  
max.  
Chip  
type  
Chip size  
dimensions  
Source -  
bond wire  
Equivalent  
device  
max.  
recommended  
data sheet  
V
Ω
mm  
mils  
100  
0.08  
0.06  
IXTD36P10-5B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH36P10  
IXTH50P10  
IXTD50P10-7B  
200  
500  
0.22  
0.16  
IXTD16P20-5B  
IXTD24P20-7B  
5B  
7B  
6.58 x 6.58  
8.84 x 7.18  
259 x 259  
348 x 283  
12 mil x 3  
15 mil x 3  
IXTH16P20  
IXTH24P20  
1.20  
0.75  
1.05  
IXTD8P50-5B  
IXTD11P50-7B  
IXTD10P60-7B  
5B  
7B  
7B  
6.58 x 6.58  
8.84 x 7.18  
8.84 x 7.18  
259 x 259  
348 x 283  
348 x 283  
12 mil x 3  
15 mil x 3  
15 mil x 3  
IXTH7P50  
IXTH11P50  
IXTH10P60  
© 2004 IXYS All rights reserved  
12  
1

中文翻译

下载PDF

与IXTD16P20-5B相关器件

型号 品牌 获取价格 描述 数据表
IXTD170N10P-8S IXYS

获取价格

 		Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD180N15P-88 IXYS

获取价格

 		Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD200N10P-88 IXYS

获取价格

 		Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD21N50 MICROSEMI

获取价格

 		Power Field-Effect Transistor, 21A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTD24N50-7X IXYS

获取价格

 		Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD24P20-7B LITTELFUSE

获取价格

 		Power Field-Effect Transistor, 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide S
IXTD36N30P-5S IXYS

获取价格

 		Power Field-Effect Transistor, 300V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD36P10-5B LITTELFUSE

获取价格

 		Power Field-Effect Transistor, 100V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide S
IXTD40N30 MICROSEMI

获取价格

 		Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Me
IXTD50N20 MICROSEMI

获取价格

 		Power Field-Effect Transistor, 50A I(D), 200V, 0.05ohm, 1-Element, N-Channel, Silicon, Met

与IXTD16P20-5B相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证