Datasheet > IXTC36P15P

IXTC36P15P

更新时间： 2024-09-28 21:07:55

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
3页	125K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTC36P15P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTC36P15P 数据手册

Preliminary Technical Information

PolarP^TMPower MOSFET

V_DSS= -150V

I_D25= - 22A

R_DS(on)≤ 120mΩ

IXTC36P15P

IXTR36P15P

(Electrically Isolated Tab)

P-Channel Enhancement Mode

Avalanche Rated

ISOPLUS247 (IXTR)

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

Isolated

T_J= 25°C to 175°C

-150

V_DGR

T_J= 25°C to 175°C, R_GS= 1MΩ

ISOPLUS220 (IXTC)

E153432

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

I_D25

I_DM

T_C= 25°C

- 22

T_C= 25°C, Pulse Width Limited by T_JM

-100

Isolated

I_A

T_C= 25°C

- 36

1.5

E_AS

G = Gate

D = Drain

S = Source

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

150

T_J

T_JM

T_stg

- 55 ... +175

175

- 55 ... +175

°C

Features

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zIsolated Mounting Surface

^z2500V~ Electrical Isolation

^zAvalanche Rated

V_ISOL

50/60 Hz, RMS, t = 1minute

2500

F_C

Mounting Force (ISOPLUS220)

Mounting Force (ISOPLUS247)

11..65 / 25..14.6

20..120 / 4.5..27

N/lb

^zExtended FBSOA

^zFast Intrinsic Diode

Weight

ISOPLUS220

ISOPLUS247

Low R_DS(ON)and Q_G

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250μA

V_DS= V_GS, I_D= - 250μA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

-150

Applications

- 3.0

- 5.0

High-Side Switching

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment

±100 nA

I_DSS

- 10 μA

- 250 μA

T_J= 150°C

Current Regulators

R_DS(on)

V_GS= -10V, I_D= -18A, Note 1

120 mΩ

Battery Charger Applications

DS99792A(01/11)

12 3

中文翻译

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与IXTC36P15P相关器件

型号	品牌	获取价格	描述	数据表
IXTC62N15P	IXYS	获取价格	Power Field-Effect Transistor, 36A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IXTC75N10	IXYS	获取价格	N-Channel Enhancement Mode
IXTC96N25T	IXYS	获取价格	Power Field-Effect Transistor, 40A I(D), 250V, 0.031ohm, 1-Element, N-Channel, Silicon, Me
IXTD01N100D-1M	LITTELFUSE	获取价格	Power Field-Effect Transistor, 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD02N50D-1M	LITTELFUSE	获取价格	Power Field-Effect Transistor, 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem
IXTD100N25P-8S	IXYS	获取价格	Power Field-Effect Transistor, 250V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD102N30P-88	IXYS	获取价格	Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD10N100	MICROSEMI	获取价格	Power Field-Effect Transistor, 10A I(D), 1000V, 1.3ohm, 1-Element, N-Channel, Silicon, Met
IXTD10P50	IXYS	获取价格	Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se
IXTD10P60-7B	LITTELFUSE	获取价格	Power Field-Effect Transistor, 500V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide S

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