Datasheet > IXTD11P50-7B

IXTD11P50-7B

更新时间： 2024-02-29 05:56:57

品牌	Logo	应用领域
力特 - LITTELFUSE		开关晶体管
页数	文件大小	规格书
1页	38K
描述
Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 0.348 X 0.283 INCH, DIE

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中文翻译

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技术参数
数据手册

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IXTD11P50-7B 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	DIE
包装说明：	0.348 X 0.283 INCH, DIE	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	最大漏源导通电阻：	0.75 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	元件数量：	1
工作模式：	ENHANCEMENT MODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

IXTD11P50-7B 数据手册

N-Channel Depletion Mode MOSFET

Depletion Mode MOSFETs

Chip size

Type

V_DSS

max.

R_DSon

max.

Chip

type

Source -

bond wire

Equivalent

device

Depletion mode MOSFETs, unlike the regular enhancement

type MOSFETs, requires a negative gate bias to turn it off.

Consequently they remain on at or above zero gate bias

voltage but otherwise have similar MOSFET characteristics.

Their Rds(on) and breakdown voltage have a positive

temperature coefficient, increasing the gate bias voltage

increases the gate channel conductivity and so decreases

Rds(on) to some extent and there is a usable intrinsic

diode. IXYS Corporation’s IXTP01N100D is a depletion

mode MOSFET rated at V_DSS= 1000 Volts and I_D= 100 mA

and its R_DS(on)= 110 Ohms at V_GS= 0 Volt. The other

dimensions

recommended

data sheet

Ω

mils

IXTD 02N50D-1M

IXTD 01N100D-1M

500

1.96 x 1.68

77 x 66

3 mil x 1

IXTP 02N50D

IXTP 01N100D

1000

110

77 x 66

depletion mode MOSFET, IXTP02N05D, is rated at V_DSS

500 Volts, I_D= 200 mA, while its R_DS(on)= 30 Ohms. The

minimum required gate bias to turn them off is –5 Volts.

They are both housed in TO-220 package and can dissipate

25 Watts at T_C= 25⁰C.

There are many applications in which IXTP01N100D and

IXTP02N05D can be used: current regulators, off-line

linear regulators, input transient voltage suppressors, input

current inrush limiters, solid state relays etc.

P-Channel Power MOSFET

Type

V_DSS

R_DS(ON)

max.

Chip

type

Chip size

dimensions

Source -

bond wire

Equivalent

device

max.

recommended

data sheet

Ω

mils

100

0.08

0.06

IXTD36P10-5B

6.58 x 6.58

8.84 x 7.18

259 x 259

348 x 283

12 mil x 3

15 mil x 3

IXTH36P10

IXTH50P10

IXTD50P10-7B

200

500

0.22

0.16

IXTD16P20-5B

IXTD24P20-7B

6.58 x 6.58

8.84 x 7.18

259 x 259

348 x 283

12 mil x 3

15 mil x 3

IXTH16P20

IXTH24P20

1.20

0.75

1.05

IXTD8P50-5B

IXTD11P50-7B

IXTD10P60-7B

6.58 x 6.58

8.84 x 7.18

259 x 259

348 x 283

12 mil x 3

15 mil x 3

IXTH7P50

IXTH11P50

IXTH10P60

中文翻译

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与IXTD11P50-7B相关器件

型号	品牌	获取价格	描述	数据表
IXTD120N15P-7S	IXYS	获取价格	Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD120N20P-8S	IXYS	获取价格	Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD120N25P-88	IXYS	获取价格	Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD12N90-7L	IXYS	获取价格	Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IXTD16P20-5B	LITTELFUSE	获取价格	Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide S
IXTD170N10P-8S	IXYS	获取价格	Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD180N15P-88	IXYS	获取价格	Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXTD200N10P-88	IXYS	获取价格	Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IXTD21N50	MICROSEMI	获取价格	Power Field-Effect Transistor, 21A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTD24N50-7X	IXYS	获取价格	Power Field-Effect Transistor, 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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