生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, X-XUUC-N | Reach Compliance Code: | unknown |
风险等级: | 5.71 | 配置: | SINGLE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 1.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | X-XUUC-N | JESD-609代码: | e0 |
元件数量: | 1 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | UNSPECIFIED |
封装形式: | UNCASED CHIP | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | NO LEAD |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTD10P50 | IXYS |
获取价格 |
Power Field-Effect Transistor, 500V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se | |
IXTD10P60-7B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 500V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD11P50-7B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 500V, 0.75ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD120N15P-7S | IXYS |
获取价格 |
Power Field-Effect Transistor, 150V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD120N20P-8S | IXYS |
获取价格 |
Power Field-Effect Transistor, 200V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD120N25P-88 | IXYS |
获取价格 |
Power Field-Effect Transistor, 250V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IXTD12N90-7L | IXYS |
获取价格 |
Power Field-Effect Transistor, 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se | |
IXTD16P20-5B | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 200V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide S | |
IXTD170N10P-8S | IXYS |
获取价格 |
Power Field-Effect Transistor, 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IXTD180N15P-88 | IXYS |
获取价格 |
Power Field-Effect Transistor, 150V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |