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IXTD102N30P-88 PDF预览

IXTD102N30P-88

更新时间： 2024-11-02 15:35:39
品牌 Logo 应用领域
IXYS 开关晶体管
页数 文件大小 规格书
1页 39K
描述
Power Field-Effect Transistor, 300V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.525 X 0.281 INCH, DIE

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IXTD102N30P-88 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：DIE
包装说明：0.525 X 0.281 INCH, DIEReach Compliance Code：compliant
风险等级：5.76配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：300 V最大漏源导通电阻：0.04 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR元件数量：1
工作模式：ENHANCEMENT MODE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IXTD102N30P-88 数据手册

  
PolarHTTM MOSFET, very low RDS(on)  
PolarHT TM MOSFETs for very low RDS(on)  
Type  
VDSS  
max.  
RDSon  
max.  
Chip  
type  
Chip size  
Source -  
bond wire  
recommended  
Equivalent  
device  
data sheet  
dimensions  
PolarHT MOSFETs feature a proprietary cell design and  
processing (patent pending) that has resulted in a  
MOSFET with a 30% reduction in RDS(on) per unit area  
along with a decrease in gate charge. IXYS has also  
reduced the wafer thickness, which substantially  
reduces thermal resistance. The combination of lower  
RDS(on), lower gate charge and higher power dissipation  
capability has resulted in a new family of MOSFETs,  
which will increase the cost effectiveness in SMPS  
applications. IXYS will also introduce HiPerFET  
versions in which the trr of the body diode is reduced  
to make them suitable for phase-shift bridges, motor  
control and Uninterruptible Power Supply applications.  
V
mΩ  
mm  
mils  
IXTD 110N055P-5S  
55  
21  
5S  
6.20 x 5.20  
244 x 205  
12 mil x 3  
IXTP 110N055P  
IXTD 75N10P-5S  
IXTD 110N10P-6S  
IXTD 140N10P-7S  
IXTD 170N10P-8S  
IXTD 200N10P-88  
100  
150  
200  
250  
300  
31  
22  
20  
15  
15  
5S  
6S  
7S  
8S  
88  
6.20 x 5.20  
6.86 x 6.86  
8.91 x 7.15  
13.34 x 7.14  
11.13 x 7.15  
244 x 205  
270 x 270  
351 x 281  
438 x 281  
525 x 281  
12 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
IXTP 75N10P  
IXTQ 110N10P  
IXTQ 140N10P  
IXTQ 170N10P  
IXTK 200N10P  
IXTD 62N15P-5S  
IXTD 96N15P-6S  
IXTD 120N15P-7S  
IXTD 150N15P-8S  
IXTD 180N15P-88  
50  
30  
23  
21  
20  
5S  
6S  
7S  
8S  
88  
6.20 x 5.20  
6.86 x 6.86  
8.91 x 7.15  
11.13 x 7.15  
13.34 x 7.14  
244 x 205  
270 x 270  
351 x 281  
525 x 281  
525 x 281  
12 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
IXTP 62N15P  
IXTQ 96N15P  
IXTQ 120N15P  
IXTQ 150N15P  
IXTK 180N15P  
IXTD 50N20P-5S  
IXTD 74N20P-6S  
IXTD 96N20P-7S  
IXTD 120N20P-8S  
IXTD 140N20P-88  
75  
42  
30  
28  
24  
5S  
6S  
7S  
8S  
88  
6.20 x 5.20  
6.86 x 6.86  
8.91 x 7.15  
11.13 x 7.15  
13.34 x 7.14  
244 x 205  
270 x 270  
351 x 281  
525 x 281  
525 x 281  
12 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
IXTP 50N20P  
IXTQ 74N20P  
IXTQ 96N20P  
IXTQ 120N20P  
IXTK 140N20P  
IXTD 42N25P-5S  
IXTD 64N25P-6S  
IXTD 82N25P-7S  
IXTD 100N25P-8S  
IXTD 120N25P-88  
100  
60  
40  
34  
30  
5S  
6S  
7S  
8S  
88  
6.20 x 5.20  
6.86 x 6.86  
8.91 x 7.15  
11.13 x 7.15  
13.34 x 7.14  
244 x 205  
270 x 270  
351 x 281  
525 x 281  
525 x 281  
12 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
IXTP 42N25P  
IXTQ 64N25P  
IXTQ 82N25P  
IXTQ 100N25P  
IXTK 120N25P  
IXTD 36N30P-5S  
IXTD 52N30P-6S  
IXTD 69N30P-7S  
IXTD 88N30P-8S  
IXTD 102N30P-88  
135  
82  
60  
50  
40  
5S  
6S  
7S  
8S  
88  
6.20 x 5.20  
6.86 x 6.86  
8.91 x 7.15  
11.13 x 7.15  
13.34 x 7.14  
244 x 205  
270 x 270  
351 x 281  
525 x 281  
525 x 281  
12 mil x 3  
12 mil x 4  
15 mil x 4  
12 mil x 6  
15 mil x 6  
IXTP 36N30P  
IXTQ 52N30P  
IXTQ 69N30P  
IXTQ 88N30P  
IXTK 102N30P  
This table reflects only new designed chips. Please contact factory for older designs.  
11  
© 2004 IXYS All rights reserved  
1

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IXTD16P20-5B LITTELFUSE

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IXTD170N10P-8S IXYS

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