Datasheet > IXTB62N50L

IXTB62N50L

更新时间： 2024-09-14 21:14:03

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	151K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTB62N50L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXTB62N50L 数据手册

Linear^TMPower MOSFET

w/Extended FBSOA

V_DSS= 500V

I_D25= 62A

R_DS(on)≤ 100mΩ

IXTB62N50L

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

PLUS264^TM

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

500

Tab

V_DGR

V_GSS

V_GSM

T_J= 25°C to 150°C, R_GS= 1MΩ

Continuous

500

± 30

± 40

G = Gate

= Drain

= Source

Tab = Drain

Transient

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

150

I_A

T_C= 25°C

E_AS

P_D

800

Features

T_J

-55 ... +150

150

°C

N/lb.

Fast Intrinsic Diode

Avalanche Rated

Low R_DS(ON)and Q_G

Low Package Inductance

T_JM

T_stg

T_L

-55 ... +150

300

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

T_SOLD

F_C

260

Advantages

Mounting Force

30..120/6.7..27

High Power Density

Easy to Mount

Space Savings

Weight

Applications

Programmable Loads

DC-DC Converters

Current Regulators

Battery Chargers

DC Choppers

Temperature and Lighting

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

500

3.0

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.5

Controls

± 200 nA

50 μA

I_DSS

T_J= 125°C

R_DS(on)

V_GS= 20V, I_D= 0.5 • I_D25, Note 1

100 mΩ

DS99336B(11/11)

12 3 4 5 6

中文翻译

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