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IXTA80N12T2 PDF预览

IXTA80N12T2

更新时间: 2024-11-18 20:07:31
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
7页 205K
描述
Power Field-Effect Transistor,

IXTA80N12T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.39
JESD-609代码:e3湿度敏感等级:2
端子面层:Matte Tin (Sn)Base Number Matches:1

IXTA80N12T2 数据手册

 浏览型号IXTA80N12T2的Datasheet PDF文件第2页浏览型号IXTA80N12T2的Datasheet PDF文件第3页浏览型号IXTA80N12T2的Datasheet PDF文件第4页浏览型号IXTA80N12T2的Datasheet PDF文件第5页浏览型号IXTA80N12T2的Datasheet PDF文件第6页浏览型号IXTA80N12T2的Datasheet PDF文件第7页 
TrenchT2TM  
Power MOSFETs  
VDSS = 120V  
ID25 = 80A  
RDS(on) 17m  
IXTA80N12T2  
IXTP80N12T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-263AA (IXTA)  
G
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
TJ = 25C to 175C  
TJ = 25C to 175C, RGS = 1M  
120  
120  
V
V
VDGR  
TO-220AB (IXTP)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IDM  
TC = 25C  
80  
A
A
G
TC = 25C, Pulse Width Limited by TJM  
200  
D
D (Tab)  
= Drain  
S
IA  
TC = 25C  
TC = 25C  
TC = 25C  
40  
400  
325  
A
mJ  
W
EAS  
PD  
G = Gate  
D
S = Source  
Tab = Drain  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
International Standard Packages  
175°C Operating Temperature  
Avalanche Rated  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Fast Intrinsic Rectifier  
High Current Handling Capability  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 100A  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
120  
2.5  
V
V
4.5  
            200 nA  
A  
Applications  
IDSS  
5
Synchronous Rectification  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
High Current Switching Applications  
TJ = 150C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
175  A  
17 m  
RDS(on)  
DS100240A(8/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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