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IXGP20N120BD1 PDF预览

IXGP20N120BD1

更新时间: 2024-11-20 14:51:43
品牌 Logo 应用领域
IXYS 局域网功率控制晶体管
页数 文件大小 规格书
5页 580K
描述
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

IXGP20N120BD1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.62
外壳连接:COLLECTOR最大集电极电流 (IC):40 A
集电极-发射极最大电压:1200 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):790 ns
标称接通时间 (ton):35 nsBase Number Matches:1

IXGP20N120BD1 数据手册

 浏览型号IXGP20N120BD1的Datasheet PDF文件第2页浏览型号IXGP20N120BD1的Datasheet PDF文件第3页浏览型号IXGP20N120BD1的Datasheet PDF文件第4页浏览型号IXGP20N120BD1的Datasheet PDF文件第5页 
High Voltage IGBT with Diode  
VCES  
IC25  
= 1200 V  
= 40 A  
IXGP 20N120B  
IXGP 20N120BD1  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
Preliminary Data Sheet  
D1  
TO-220 (IXGP)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C (TAB)  
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
40  
20  
100  
A
A
A
G = Gate  
C = Collector  
TAB = Collector  
E = Emitter  
SSOA  
V
= 15 V, TJ = 125°C, RG = 10 Ω  
ICM = 40  
A
(RBSOA)  
CGlaE mped inductive load  
@0.8 VCES  
Features  
z
International standard package  
IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
PC  
TC = 25°C  
190  
W
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- Rice cookers  
z
z
MOS Gate turn-on  
- drive simplicity  
Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Md  
Mounting torque  
(M3.5 screw)  
0.55/5 Nm/lb.in.  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
260  
4
°C  
°C  
g
Maximum tab temperature  
soldering SMD devices for 10s  
Advantages  
z
Weight  
Saves space (two devices in one  
package)  
z
Easy to mount with 1 screw  
z
Reduces assembly time and cost  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
VCE = V  
20N120B  
50 µA  
VGE = 0CVES  
20N120BD1  
150 µA  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15 V  
2.9  
2.8  
3.4  
V
V
Note 2  
TJ=125°C  
© 2003 IXYS All rights reserved  
DS99138(12/03)  

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