Datasheet > IXGH6N170

IXGH6N170

更新时间： 2024-11-18 11:14:11

品牌	Logo	应用领域
IXYS		双极性晶体管高压
页数	文件大小	规格书
4页	138K
描述
High Voltage IGBT

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中文翻译

获取价格

数据手册

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IXGH6N170 数据手册

IXGH 6N170

IXGT 6N170

V_CES

I_C25

= 1700 V

12 A

High Voltage

IGBT

V_CE(sat)= 4.0 V

t_fi(typ)

= 290 ns

Symbol

TestConditions

Maximum Ratings

TO-268(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

1700

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

C (TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-247AD(IXGH)

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 33 Ω

I_CM= 12

@ 0.8 V_CES

C (TAB)

Clamped inductive load

P_C

T_C= 25°C

G = Gate,

E=Emitter,

C = Collector,

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

^zInternational standard packages

JEDEC TO-268 and JEDEC

TO-247 AD

^zHigh current handling capability

^zMOS Gate turn-on

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

300

°C

260

M_d

Mounting torque (M3) TO-247

1.13/10Nm/lb.in.

- drive simplicity

Weight

TO-247 AD

TO-268

^zRugged NPT structure

^zMolding epoxies meet UL 94 V-0

flammability classification

Applications

^zCapacitor discharge & pulser circuits

^zAC motor speed control

^zDC servo and robot drives

^zDC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

min. typ. max.

^zUninterruptible power supplies (UPS)

^zSwitched-mode and resonant-mode

power supplies

BV_CES

V_GE(th)

I_C= 250 μA, V_GE= 0 V

I_C= 250 μA, V_CE= V_GE

1700

3.0

5.0

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

100

μA

T_J= 125°C

Advantages

I_GES

V_CE= 0 V, V_GE= ± 20 V

±100

^zHigh power density

^zSuitable for surface mounting

^zEasy to mount with 1 screw,

(isolated mounting screw hole)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

3.0

4.0

DS98989B(09/06)

12 3 4

中文翻译

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