Datasheet > IXGK120N60B

IXGK120N60B

更新时间： 2024-09-20 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
6页	229K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGK120N60B 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.66	Base Number Matches：	1

IXGK120N60B 数据手册

HiPerFAST^TMIGBTs

V_CES= 600V

I_C90= 120A

V_CE(sat)≤ 2.1V

IXGK120N60B*

IXGX120N60B

*Obsolete Part Number

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

600

±20

±30

Tab

V_CGR

V_GES

PLUS247 (IXGX)

V_GEM

Transient

I_C25

I_C90

I_LRMS

I_CM

T_C= 25°C ( Chip Capability )

T_C= 90°C

200

120

Terminal Current Limit

T_C= 25°C, 1ms

300

Tab

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2.4Ω

Clamped Inductive Load

I_CM= 200

@ 0.8 • V_CES

G = Gate

= Emitter

C = Collector

Tab = Collector

P_C

T_C= 25°C

660

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

Very High Current, Fast Switching IGBT

Low V_CE(sat)

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

- for Minimum On-State Conduction

Losses

MOS Gate turn-on

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

- Drive Simplicity

Weight

TO-264

PLUS247

Advantages

PLUS 247^TMPackage for Clip or Spring

Mounting

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

600

2.5

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 1mA, V_GE= 0V

I_C= 4mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

5.5

AC Motor Speed Drives

DC Servo and Robot Drives

DC Choppers

Uninterruptible Power Supplies (UPS)

200 μA

T_J= 125°C

2 mA

Switch-Mode and Resonant-Mode

I_GES

V_CE= 0V, V_GE= ± 20V

±400 nA

Power Supplies

V_CE(sat)

I_C= I_C90, V_GE= 15V, Note 1

2.1

DS98602C(08/10)

12 3 4 5 6

中文翻译

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