Datasheet > IXGK120N120B3

IXGK120N120B3

更新时间： 2024-01-03 09:50:09

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	152K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGK120N120B3 数据手册

Advance Technical Information

GenX3^TM1200V IGBTs

V_CES= 1200V

I_C90= 120A

V_CE(sat)≤ 3.0V

IXGK120N120B3

IXGX120N120B3

High Speed Low Vsat PT IGBTs

for 3-20 kHz Switching

TO-264 (IXGK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

(TAB)

V_CGR

V_GES

PLUS 247^TM(IXGX)

V_GEM

Transient

±30

I_C25

I_C90

I_LRMS

I_CM

T_C= 25°C ( Chip Capability )

T_C= 90°C

200

120

370

Terminal Current Limit

T_C= 25°C, 1ms

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 240

(TAB)

V_CES< 1200

P_C

T_C= 25°C

830

G = Gate

C = Collector

= Emitter

T_J

-55 ... +150

150

°C

TAB = Collector

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

^zOptimized for Low Conduction and

Switching Losses

M_d

F_C

Mounting Torque ( IXGK )

Mounting Force ( IXGX )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

^zSquare RBSOA

^zInternational Standard Packages

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_CE= 0V

I_C= 1mA, V_CE= V_GE

V_CE= V_CES,V_GE= 0V

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

5.0

50 μA

5 mA

T_J= 125°C

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

I_GES

V_CE= 0V, V_GE= ±20V

±400 nA

V_CE(sat)

I_C= 100A, V_GE= 15V, Note 1

2.4

3.0

DS100152(05/09)

12 3

中文翻译

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