5秒后页面跳转
IXGI48N60C3 PDF预览

IXGI48N60C3

更新时间: 2024-11-22 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 444K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGI48N60C3 数据手册

 浏览型号IXGI48N60C3的Datasheet PDF文件第2页浏览型号IXGI48N60C3的Datasheet PDF文件第3页浏览型号IXGI48N60C3的Datasheet PDF文件第4页浏览型号IXGI48N60C3的Datasheet PDF文件第5页浏览型号IXGI48N60C3的Datasheet PDF文件第6页浏览型号IXGI48N60C3的Datasheet PDF文件第7页 
GenX3TM  
600V IGBT  
IXGI48N60C3*  
IXGA48N60C3  
IXGP48N60C3  
VCES = 600V  
IC110 = 48A  
VCE(sat) 2.5V  
tfi(typ) = 38ns  
IXGH48N60C3  
High-Speed PT IGBTs for  
40-100kHz Switching  
*Obsolete Part Number  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1M  
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
IC25  
IC110  
TC = 25°C  
TC = 110°C  
75  
48  
A
A
Features  
ICM  
TC = 25°C, 1ms  
250  
A
Optimized for Low Switching Losses  
Square RBSOA  
IA  
TC = 25°C  
TC = 25°C  
30  
A
Avalanche Rated  
EAS  
300  
mJ  
Fast Switching  
International Standard Packages  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3  
Clamped Inductive Load  
ICM = 100  
A
(RBSOA)  
VCE VCES  
PC  
TC = 25°C  
300  
W
Advantages  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
High Power Density  
Low Gate Drive Requirement  
-55 ... +150  
TL  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
TSOLD  
Applications  
FC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-247&TO-220)  
10..65 / 2.5..14.6  
1.13/10  
N/lb.  
Nm/lb.in.  
High Frequency Power Inverters  
UPS  
Weight  
TO-262 Lead  
TO-263  
TO-220  
0.4  
2.5  
3.0  
6.0  
g
g
g
g
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
TO-247  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
600  
3.0  
V
V
5.5  
ICES  
VCE = VCES, VGE = 0V  
25 A  
250 A  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
2.3  
1.8  
2.5  
V
V
TJ = 125°C  
© 2018 IXYS CORPORATION, All Rights Reserved  
DS99953C(11/18)  

与IXGI48N60C3相关器件

型号 品牌 获取价格 描述 数据表
IXGJ40N60C2D1 IXYS

获取价格

HiPerFASTTM IGBTs w/ Diode
IXGJ50N60B IXYS

获取价格

HiPerFAST IGBT
IXGJ50N60C4D1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247, ISOLATED TO
IXGK100N170 IXYS

获取价格

High Voltage IGBT
IXGK100N170 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGK120N120A3 IXYS

获取价格

GenX3 A3-Class IGBTs
IXGK120N120A3 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGK120N120B3 IXYS

获取价格

GenX3 1200V IGBTs
IXGK120N120B3 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGK120N60A3 IXYS

获取价格

GenX3 A3-Class IGBTS