是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.81 | 最大集电极电流 (IC): | 48 A |
集电极-发射极最大电压: | 600 V | 最大降落时间(tf): | 400 ns |
门极发射器阈值电压最大值: | 5.5 V | 门极-发射极最大电压: | 20 V |
JESD-609代码: | e0 | 最高工作温度: | 150 °C |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXGH90N60B3 | IXYS | GenX3 600V IGBT |
获取价格 |
|
IXGI48N60C3 | LITTELFUSE | GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30 |
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|
IXGJ40N60C2D1 | IXYS | HiPerFASTTM IGBTs w/ Diode |
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|
IXGJ50N60B | IXYS | HiPerFAST IGBT |
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|
IXGJ50N60C4D1 | IXYS | Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247, ISOLATED TO |
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|
IXGK100N170 | IXYS | High Voltage IGBT |
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