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IXGK120N60B3 PDF预览

IXGK120N60B3

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 273K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGK120N60B3 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.66
Base Number Matches:1

IXGK120N60B3 数据手册

 浏览型号IXGK120N60B3的Datasheet PDF文件第2页浏览型号IXGK120N60B3的Datasheet PDF文件第3页浏览型号IXGK120N60B3的Datasheet PDF文件第4页浏览型号IXGK120N60B3的Datasheet PDF文件第5页浏览型号IXGK120N60B3的Datasheet PDF文件第6页浏览型号IXGK120N60B3的Datasheet PDF文件第7页 
GenX3TM 600V  
IGBTs  
IXGK120N60B3*  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 120A  
£ 1.8V  
= 145ns  
IXGX120N60B3  
*Obsolete Part Number  
Medium-Speed-Low-Vsat PT  
IGBTs for 5-40kHz Switching  
TO-264 (IXGK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
C
E
600  
600  
±20  
±30  
V
V
V
V
VCGR  
Tab  
VGES  
VGEM  
Transient  
PLUS247TM (IXGX)  
IC25  
TC = 25°C (Chip Capability)  
TC = 110°C  
280  
120  
160  
600  
A
A
A
A
IC110  
ILRMS  
ICM  
Terminal Current Limit  
TC = 25°C, 1ms  
G
C
E
SSOA  
(RBSOA)  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 300  
A
VCE VCES  
PC  
TC = 25°C  
780  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
Optimized for Low Conduction and  
Switching Losses  
Square RBSOA  
High Current Handling Capability  
International Standard Packages  
Md  
FC  
Mounting Torque (IXGK)  
Mounting Force (IXGX)  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
z
z
z
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 500μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
5.0  
z
z
50 μA  
mA  
±100 nA  
1.8  
z
TJ = 125°C  
3
z
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
1.5  
V
DS99993A(09/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  

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