Datasheet > IXGH85N30C3

IXGH85N30C3

更新时间： 2022-11-11 13:59:58

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	106K
描述
GenX3 300V IGBT

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中文翻译

获取价格

数据手册

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IXGH85N30C3 数据手册

Preliminary Technical Information

GenX3^TM300V IGBT

V_CES= 300V

I_C110= 85A

V_CE(sat)≤ 1.9V

t_{fi typ}= 70ns

IXGH85N30C3

High Speed PT IGBTs for

50-150kHz switching

TO-247 AD

(IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

300

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

(TAB)

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C (chip capability)

T_C= 25°C, 1ms

420

I_A

T_C= 25°C

E_AS

400

Features

SSOA

_GE= 15V, T_VJ= 125°C, R_G= 3.3Ω

I_CM= 170

High Frequency IGBT

Square RBSOA

High avalanche capability

Drive simplicity with MOS Gate

Turn-On

(RBSOA)

Clamped inductive load @ ≤ 300V

T_C= 25°C

P_C

333

T_J

-55 ... +150

150

°C

High current handling capability

T_JM

T_stg

-55 ... +150

Applications

T_L

T_SOLD

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

260

°C

^zPFC Circuits

^zPDP Systems

^zSwitched-mode and resonant-mode

converters and inverters

^zSMPS

M_d

Mounting torque (TO-247)

1.13/10

Nm/lb.in.

Weight

^zAC motor speed control

^zDC servo and robot drives

^zDC choppers

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

BV_CES

V_GE(th)

I_C= 250µA, V_GE= 0V

I_C= 250µA, V_CE= V_GE

300

2.5

5.0

I_CES

V_CE= V_CES

V_GE= 0V

750

µA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= 20V

I_C= 85A, V_GE= 15V

100

1.9

V_CE(sat)

1.64

1.67

DS99883A(01-08)

12 3 4 5 6

中文翻译

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