Datasheet > IXGH72N60C3

IXGH72N60C3

更新时间： 2024-11-19 14:56:59

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	849K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGH72N60C3 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

IXGH72N60C3 数据手册

GenX3^TM600V IGBT

IXGH72N60C3*

V_CES= 600V

I_C110= 72A

V_CE(sat)≤ 2.5V

t_{fi (typ)}= 55ns

*Obsolete Part Number

High-Speed PT IGBT for

40-100kHz Switching

Symbol

Test Conditions

Maximum Ratings

TO-247 AD

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

Tab

I_C25

I_C110

I_CM

T_C= 25°C (Limited by Leads)

T_C= 110°C (Chip Capability)

T_C= 25°C, 1ms

360

G = Gate

= Collector

E = Emitter

Tab = Collector

I_A

T_C= 25°C

E_AS

500

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

I_CM= 150

(RBSOA)

Clamped Inductive Load

V_CE≤ V_CES

Features

P_C

T_C= 25°C

540

^zOptimized for Low Switching Losses

^zSquare RBSOA

T_J

T_JM

T_stg

-55 ... +150

150

°C

^zAvalanche Rated

-55 ... +150

^zInternational Standard Package

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Advantages

M_d

Mounting Torque

1.13/10

Nm/lb.in.

^zHigh Power Density

^zLow Gate Drive Requirement

Weight

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

^zHigh Frequency Power Inverters

^zUPS

BV_CES

I_C= 250μA, V_GE= 0V

600

^zMotor Drives

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

^zSMPS

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

V_CE= V_CES, V_GE= 0V

50 μA

±100 nA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

V_CE(sat)

I_C= 50A, V_GE= 15V

2.10

1.65

2.50

DS99961B(11/09)

12 3 4 5 6 7

中文翻译

下载PDF

与IXGH72N60C3相关器件

型号	品牌	获取价格	描述	数据表
IXGH80N40B2	IXYS	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 400V V(BR)CES, N-Channel, TO-247AD, TO-247AD,
IXGH85N30C3	IXYS	获取价格	GenX3 300V IGBT
IXGH85N30C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH9090	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 48A I(C) \| TO-247AD
IXGH90N60B3	IXYS	获取价格	GenX3 600V IGBT
IXGI48N60C3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGJ40N60C2D1	IXYS	获取价格	HiPerFASTTM IGBTs w/ Diode
IXGJ50N60B	IXYS	获取价格	HiPerFAST IGBT
IXGJ50N60C4D1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247, ISOLATED TO
IXGK100N170	IXYS	获取价格	High Voltage IGBT