Datasheet > IXGH2N250

IXGH2N250

更新时间： 2024-11-26 08:47:23

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	179K
描述
Insulated Gate Bipolar Transistor, 5.5A I(C), 2500V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN

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IXGH2N250 数据手册

Advance Technical Information

High Voltage IGBTs

V_CES= 2500V

I_C110= 2A

IXGH2N250

IXGT2N250

for Capacitor Discharge

Applications

V_CE(sat)≤ 3.1V

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

C (TAB)

V_CES

V_CGR

T_C= 25°C to 150°C

2500

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-268 (IXGT)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

5.5

2.0

13.5

SSOA

(RBSOA)

P_C

_GE= 15V, T_VJ= 125°C, R_G= 50Ω

I_CM= 6

Clamped Inductive Load

T_C= 25°C

V_CE≤ 2000

C (TAB)

G = Gate

E = Emitter

= Collector

T_J

-55 ... +150

150

°C

TAB = Collector

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Features

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

^zOptimized for Low Conduction and

Switching Losses

^zInternational Standard Packages

Weight

TO-247

TO-268

Advantages

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

^zHigh Power Density

Min.

Typ.

Max.

^zLow Gate Drive Requirement

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

2500

3.0

5.5

Applications

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

10 μA

100 μA

T_J= 125°C

^zSwitched-Mode and Resonant-Mode

Power Supplies

^zUninterruptible Power Supplies (UPS)

^zCapacitor Discharge Circuits

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

2.6

3.1

T_J= 125°C

DS100162(06/09)

12 3 4 5 6

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