Datasheet > IXGH30N120C3H1

IXGH30N120C3H1

更新时间： 2024-11-18 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
7页	209K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH30N120C3H1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.16
Base Number Matches：	1

IXGH30N120C3H1 数据手册

Preliminary Technical Information

GenX3^TM1200V IGBT

IXGH30N120C3H1

V_CES

I_C100

= 1200V

= 24A

V_CE(sat)≤ 4.2V

High speed PT IGBTs for

10-50kHz Switching

t_fi(typ)

= 42ns

Symbol

Test Conditions

Maximum Ratings

TO-247AD

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C100

I_CM

T_C= 25°C

TAB

T_C= 100°C

T_C= 25°C, 1ms

115

I_A

T_C= 25°C

E_AS

250

G = Gate

E = Emitter

= Collector

SSOA

(RBSOA)

_GE= 15V, T_J= 125°C, R_G= 5Ω

I_CM= 60

TAB = Collector

Clamped Inductive Load

@V_CE≤ 1200

P_C

T_C= 25°C

250

T_J

T_JM

T_stg

-55 ... +150

150

°C

Features

-55 ... +150

^zOptimized for Low Conduction and

Switching Losses

M_d

Mounting Torque

1.13/10

Nm/lb.in.

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

^zSquare RBSOA

^zAnti-Parallel Ultra Fast Diode

^zAvalanche Rated

^zInternational Standard Package

Weight

Advantages

^zHigh Power Density

Symbol

Test Conditions

Characteristic Values

^zLow Gate Drive Requirement

(T_J= 25°C, Unless Otherwise Specified)

Min.

1200

3.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CESV_GE= 0V

Applications

5.0

AC Motor Speed Control

DC Servo and Robot Drives

DC Choppers

Uninterruptible Power Supplies (UPS)

100 μA

T_J= 125°C

1.5 mA

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 24A, V_GE= 15V, Note 2

3.6

3.2

4.2

Switch-Mode and Resonant-Mode

Power Supplies

DS100123(03/09)

12 3 4 5 6 7

中文翻译

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与IXGH30N120C3H1相关器件

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IXGH30N30	IXYS	获取价格	HiPerFAST IGBT
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