IXFT30N50

更新时间： 2024-11-19 22:07:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	113K
描述
HiPerFET Power MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFT30N50 数据手册

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH/IXFT 30N50

IXFH/IXFT 32N50

500V

30 A 0.16 W

32 A 0.15 W

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

t_rr£ 250 ns

TO-247 AD (IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

500

V_GS

V_GSM

Continuous

Transient

±20

±30

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

30N50

32N50

30N50

32N50

30N50

32N50

120

128

T_C= 25°C

pulse width limited by T_JM

T_C= 25°C

TO-268 (D3) Case Style

E_AS

T_C= 25°C

I_D= 25°C

1.5

(TAB)

E_AR

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

V/ns

T_J£ 150°C, R_G= 2 W

G = Gate,

S = Source,

D = Drain,

TAB = Drain

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

• Internationalstandardpackages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

M_d

1.13/10 Nm/lb.in.

Weight

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Diode

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ.

max.

Applications

• DC-DC converters

V_GS= 0 V, I_D= 1 mA

500

• Battery chargers

V_DSStemperature coefficient

0.102

%/K

• Switched-modeandresonant-mode

powersupplies

• DC choppers

V_GS(th)V_DS= V_GS, I_D= 4 mA

V_GS(th)temperature coefficient

-0.206

%/K

• AC motor control

• Temperatureandlightingcontrols

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

200

Advantages

• Easy to mount with 1 screw (TO-247)

(isolatedmountingscrewhole)

• Space savings

R_DS(on)V_GS= 10 V, I_D= 15A

32N50

30N50

0.15

0.16

Pulse test, t £ 300 ms, duty cycle d £ 2 %

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

97518H(6/99)

1 - 4

12 3 4

中文翻译

下载PDF

与IXFT30N50相关器件

型号	品牌	获取价格	描述	数据表
IXFT30N50P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET
IXFT30N50P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFT30N50Q3	IXYS	获取价格	HiperFETTM Power MOSFETs Q3-Class
IXFT30N60P	IXYS	获取价格	PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode
IXFT30N60P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFT30N60Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFT30N60X	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFT30N85XHV	IXYS	获取价格	MOSFET N-CH 850V 30A TO268
IXFT30N85XHV	LITTELFUSE	获取价格	采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件，具有业内最低的导通
IXFT320N10T2	IXYS	获取价格	TrenchT2 HiperFET Power MOSFET