5秒后页面跳转
IXFT30N85XHV PDF预览

IXFT30N85XHV

更新时间: 2024-11-06 14:56:11
品牌 Logo 应用领域
力特 - LITTELFUSE 高电压电源二极管
页数 文件大小 规格书
7页 291K
描述
采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通电阻,因此能够在高电压电源转换应用中实现高功率密度。 这种器件采用电荷补偿原理和专有工艺技术开发,具有低栅

IXFT30N85XHV 数据手册

 浏览型号IXFT30N85XHV的Datasheet PDF文件第2页浏览型号IXFT30N85XHV的Datasheet PDF文件第3页浏览型号IXFT30N85XHV的Datasheet PDF文件第4页浏览型号IXFT30N85XHV的Datasheet PDF文件第5页浏览型号IXFT30N85XHV的Datasheet PDF文件第6页浏览型号IXFT30N85XHV的Datasheet PDF文件第7页 
Advance Technical Information  
X-Class HiPerFETTM  
Power MOSFET  
VDSS = 850V  
ID25 = 30A  
RDS(on) 220m  
IXFT30N85XHV  
IXFH30N85X  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-268HV (IXFT)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 150C  
850  
850  
V
V
D (Tab)  
VDGR  
TJ = 25C to 150C, RGS = 1M  
TO-247 (IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
30  
60  
A
A
G
D
IA  
TC = 25C  
TC = 25C  
15  
1
A
J
S
D (Tab)  
= Drain  
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
D
Tab = Drain  
695  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
High Voltage Package  
Low RDS(ON) and QG  
Avalanche Rated  
Low Package Inductance  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 2.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
850  
V
V
Applications  
3.5  
5.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
25 A  
3 mA  
TJ = 125C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
220 m  
DS100760(11/16)  
© 2016 IXYS CORPORATION, All Rights Reserved  

与IXFT30N85XHV相关器件

型号 品牌 获取价格 描述 数据表
IXFT320N10T2 IXYS

获取价格

TrenchT2 HiperFET Power MOSFET
IXFT320N10T2 LITTELFUSE

获取价格

这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能
IXFT32N100XHV LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFT32N50 IXYS

获取价格

HiPerFET Power MOSFETs
IXFT32N50Q IXYS

获取价格

HiPerFET⑩ Power MOSFETs Q-Class
IXFT32N50Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFT340N075T2 IXYS

获取价格

TrenchT2 HiPerFET Power MOSFET
IXFT36N50P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFT36N50P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFT36N55Q LITTELFUSE

获取价格

Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Met