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IXFQ22N60P3 PDF预览

IXFQ22N60P3

更新时间: 2024-11-18 11:14:03
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页数 文件大小 规格书
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描述
Polar3 HiperFET Power MOSFETs

IXFQ22N60P3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-3P包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:8.53Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:488196
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-3P
Samacsys Released Date:2017-11-27 06:42:54Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):400 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.36 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):500 W最大脉冲漏极电流 (IDM):55 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFQ22N60P3 数据手册

 浏览型号IXFQ22N60P3的Datasheet PDF文件第2页浏览型号IXFQ22N60P3的Datasheet PDF文件第3页浏览型号IXFQ22N60P3的Datasheet PDF文件第4页浏览型号IXFQ22N60P3的Datasheet PDF文件第5页 
Advance Technical Information  
Polar3TM HiperFETTM  
Power MOSFETs  
VDSS = 600V  
ID25 = 22A  
RDS(on) 360mΩ  
IXFP22N60P3  
IXFQ22N60P3  
IXFH22N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXFP)  
Fast Intrinsic Rectifier  
G
D
Tab  
S
TO-3P (IXFQ)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Tab  
ID25  
IDM  
TC = 25°C  
22  
55  
A
A
TO-247 (IXFH)  
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
11  
A
EAS  
400  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
35  
V/ns  
W
G
D
S
Tab  
500  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
TJM  
Tstg  
Tab = Drain  
-55 ... +150  
Features  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-220  
TO-3P  
TO-247  
3.0  
5.5  
6.0  
g
g
g
z Low RDS(ON) and QG  
z Low Package Inductance  
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.0  
Applications  
±100 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25 μA  
1.25 mA  
TJ = 125°C  
z DC-DC Converters  
z Laser Drivers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
360 mΩ  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
DS100321(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

IXFQ22N60P3 替代型号

型号 品牌 替代类型 描述 数据表
IXTQ22N60P IXYS

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