5秒后页面跳转
IXFQ26N50Q PDF预览

IXFQ26N50Q

更新时间: 2024-11-02 14:42:55
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
4页 626K
描述
Power Field-Effect Transistor, 26A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN

IXFQ26N50Q 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.76
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):26 A
最大漏源导通电阻:0.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified表面贴装:NO
端子面层:PURE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFQ26N50Q 数据手册

 浏览型号IXFQ26N50Q的Datasheet PDF文件第2页浏览型号IXFQ26N50Q的Datasheet PDF文件第3页浏览型号IXFQ26N50Q的Datasheet PDF文件第4页 
HiPerFETTM  
PowerMOSFETs  
IXFH 26N50Q  
IXFQ 26N50Q  
IXFT 26N50Q  
VDSS  
ID25  
RDS(on)  
trr  
= 500 V  
= 26 A  
= 0.20 Ω  
250 ns  
Q-Class  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,Highdv/dt  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
(TAB)  
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
TO-3P(IXFQ)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
26  
104  
26  
A
A
A
EAR  
TC = 25°C  
TC = 25°C  
30  
1.5  
5
mJ  
J
EAS  
G
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
V/ns  
C
E
(TAB)  
TO-268 (D3) (IXFT) Case Style  
PD  
TC = 25°C  
300  
W
TJ  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TJM  
Tstg  
G
S
(TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
Md  
1.13/10  
Nm/lb.in.  
G = Gate,  
D = Drain,  
TAB = Drain  
S = Source,  
Weight  
TO-247, TO-3P  
TO-268  
6
4
g
g
Features  
Symbol  
TestConditions  
Characteristic Values  
z IXYS advanced low Qg process  
z Internationalstandardpackages  
z Low RDS (on)  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
VDSS  
VGS = 0 V, ID = 250 µA  
500  
V
z UnclampedInductiveSwitching(UIS)  
rated  
VGS(th)  
VDS = VGS, ID = 4 mA  
2.5  
4.5  
V
z Fast switching  
z Molding epoxies meet UL 94 V-0  
flammability classification  
IGSS  
VGS = 20 VDC, VDS = 0  
100  
nA  
IDSS  
VDS = V  
T = 25°C  
TJJ = 125°C  
25  
1
µA  
mA  
VGS = 0DVSS  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 ID25  
0.20  
NGoSte 2  
z
Easy to mount  
Space savings  
High power density  
z
z
© 2003 IXYS All rights reserved  
DS99128(12/03)  

与IXFQ26N50Q相关器件

型号 品牌 获取价格 描述 数据表
IXFQ26N60P IXYS

获取价格

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFQ28N60P3 IXYS

获取价格

Polar3 HiperFET Power MOSFETs
IXFQ28N60P3 LITTELFUSE

获取价格

PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFQ30N50P IXYS

获取价格

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
IXFQ30N60X IXYS

获取价格

Power Field-Effect Transistor,
IXFQ30N60X LITTELFUSE

获取价格

采用快速体二极管的超级结X-Class功率MOSFET是坚固耐用的器件,具有业内最低的导通
IXFQ34N50P3 LITTELFUSE

获取价格

PolarP3? HiPerFET?产品系列是针对300V, 500V至600V产品系列的
IXFQ50N50P3 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFQ50N50P3 IXYS

获取价格

Power Field-Effect Transistor,
IXFQ50N60P3 IXYS

获取价格

Polar3 HiperFET Power MOSFET