5秒后页面跳转
IXFR100N25 PDF预览

IXFR100N25

更新时间: 2024-11-20 21:55:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 83K
描述
HiPerFET Power MOSFETs ISOPLUS247

IXFR100N25 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (ID):87 A
最大漏源导通电阻:0.027 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):400 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFR100N25 数据手册

 浏览型号IXFR100N25的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerFETTMPowerMOSFETs  
ISOPLUS247TM  
IXFR 100N25  
VDSS  
= 250  
= 87  
V
A
ID25  
RDS(on)  
= 27 mΩ  
(Electrically Isolated Backside)  
t 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
rr  
ISOPLUS247TM  
E153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
250  
250  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
Isolated backside*  
D = Drain  
ID25  
IL(RMS)  
IDM  
TC = 25°C (MOSFET chip capability)  
TC =Externalleadcurrentlimit  
TC = 25°C, Note 1  
87  
75  
400  
100  
A
A
A
A
G = Gate  
S = Source  
IAR  
TC = 25°C  
* Patent pending  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
Features  
PD  
TC = 25°C  
400  
W
l Silicon chip on Direct-Copper-Bond  
substrate  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
l Low drain to tab capacitance(<30pF)  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
l Rated for Unclamped Inductive Load  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
2500  
5
°C  
V~  
g
VISOL  
Weight  
50/60  
Hz,  
RMSt  
=
1
min  
Switching (UIS)  
l Fast intrinsic Rectifier  
Applications  
l
DC-DC converters  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
Battery chargers  
l
Switched-mode and resonant-mode  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20 V, VDS = 0  
250  
2.0  
V
4 V  
power supplies  
l
DC choppers  
l AC motor control  
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ  
=
25°C  
100 µA  
2 mA  
Advantages  
l
Easy assembly  
TJ = 125°C  
l
Space savings  
RDS(on)  
VGS = 10 V, ID = IT  
Notes 2, 3  
27 mΩ  
l
High power density  
© 2001 IXYS All rights reserved  
98840 (5/01)  

与IXFR100N25相关器件

型号 品牌 获取价格 描述 数据表
IXFR102N30P IXYS

获取价格

PolarHT HiPerFET Power MOSFET
IXFR102N30P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFR10N100F IXYS

获取价格

HiPerFET Power MOSFETs ISOPLUS247
IXFR10N100Q IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR120N20 IXYS

获取价格

HiPerFETTM Power MOSFETs ISOPLUS247
IXFR120N20 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFR12N100F IXYS

获取价格

HiPerFET Power MOSFETs ISOPLUS247
IXFR12N100Q IXYS

获取价格

N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR12N100Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFR140N20P IXYS

获取价格

PolarHT HiPerFET Power MOSFET ISOPLUS247