Datasheet > IXFR16N120P

IXFR16N120P

更新时间： 2024-11-02 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	140K
描述
Polar Power MOSFET HiPerFET

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中文翻译

获取价格

数据手册

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IXFR16N120P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 1200V

I_D25= 9A

R_DS(on)≤ 1.04Ω

≤ 300ns

IXFR16N120P

N-Channel Enhancement Mode

AvalancheRated

Fast Intrinsic Diode

t_rr

ISOPLUS247(IXFR)

E153432

Symbol

V_DSS

TestConditions

MaximumRatings

T_J= 25°C to 150°C

1200

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C=25°C

IsolatedTab

T_C= 25°C, pulse width limited by T_JM

I_A

T_C=25°C

G = Gate

S = Source

= Drain

E_AS

800

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C=25°C

V/ns

Features

230

• Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

• Low drain to tab capacitance(<30pF)

T_L

Maximum lead temperature for soldering

Plastic body for 10s

300

260

°C

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

T_SOLD

V_ISOL

F_C

50/60 Hz, RMS, 1 minute

Mountingforce

2500

• F^raa^tes^dt intrinsic Rectifier

20..120/4.5..27

N/lb.

Advantages

Weight

• Easyassembly

• Spacesavings

• High power density

Applications:

Symbol

TestConditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

^ꢀHigh Voltage Switched-mode and

resonant-mode powersupplies

^ꢀHigh Voltage Pulse Power Applications

^ꢀHigh Voltage Discharge circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

1200

3.5

6.5

± 200 nA

^ꢀHigh Voltage DC-DC converters

^ꢀHigh Voltage DC-AC inverters

I_DSS

V_DS= V_DSS

V_GS= 0V

25 μA

2.5 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 8A, Note 1

1.04

DS99897A(04/08)

12 3 4

中文翻译

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