Datasheet > IXFR21N100Q_03

IXFR21N100Q_03

更新时间： 2024-11-06 11:14:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	112K
描述
HiPerFET Power MOSFETs ISOPLUS247

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中文翻译

获取价格

数据手册

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IXFR21N100Q_03 数据手册

HiPerFET^TMPowerMOSFETs

ISOPLUS247^TM

IXFR 21N100Q

V_DSS

I_D25

R_DS(on)

= 1000 V

18 A

= 0.50 Ω

(Electrically Isolated Back Surface)

t_rr≤ 250 ns

N-Channel Enhancement Mode, Low Q_g,

High dv/dt, Low t_rr, HDMOS^TMFamily

ISOPLUS247^TM

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1000

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated backside*

D = Drain

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, Note 1

T_C= 25°C

G = Gate

S = Source

* Patent pending

E_AR

E_AS

T_C= 25°C

2.5

Features

^zSilicon chip on Direct-Copper-Bond

substrate

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

P_D

T_C= 25°C

350

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

^zIXYS advanced low Q_gprocess

^zLow gate charge and capacitances

- easier to drive

-faster switching

^zLow drain to tab capacitance(<30pF)

^zLow R_{DS (on)}HDMOS^TMprocess

^zRugged polysilicon gate cell structure

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

^zRated for Unclamped Inductive Load

Switching (UIS)

^zFast intrinsic Rectifier

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

DC-DC converters

Battery chargers

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

1000

5 V

Switched-mode and resonant-mode

power supplies

DC choppers

^zAC motor control

V_GS= ±20 V, V_DS= 0

±100 nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

100 µA

2 mA

Advantages

T_J= 125°C

Easy assembly

R_DS(on)

V_GS= 10 V, I_D= I_T

Notes 2, 3

0.5

Ω

Space savings

High power density

DS98723B(01/03)

12 3 4

中文翻译

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