Datasheet > IXFR180N07

IXFR180N07

更新时间： 2024-09-15 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	37K
描述
HiPerFET Power MOSFETs ISOPLUS247

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中文翻译

获取价格

数据手册

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IXFR180N07 数据手册

HiPerFET^TMPower MOSFETs

ISOPLUS247^TM

(Electrically Isolated Back Surface)

IXFR 180N07 V_DSS= 70 V

I_D25= 180 A

R_DS(on)

6 mW

t_rr£ 250 ns

Single MOSFET Die

Preliminary data sheet

ISOPLUS 247^TM

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

V_GSM

Continuous

Transient

±20

±30

Isolated back surface*

D = Drain

I_D25

I_D(RMS)

I_DM

T_C= 25°C (MOSFET chip capability)

Externallead(currentlimit)

T_C= 25°C, Note 1

180

720

180

G = Gate

S = Source

I_AR

T_C= 25°C

*Patentpending

E_AR

E_AS

T_C= 25°C

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_J

T_C= 25°C

400

Features

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

• SiliconchiponDirect-Copper-Bond

substrate

- High power dissipation

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

- Isolated mounting surface

- 2500V electricalisolation

• Low drain to tab capacitance(<25pF)

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

• Low R

HDMOS^TMprocess

• Rugge^Dd^Sp^(ooⁿ⁾lysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Fast intrinsic Rectifier

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Applications

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

• AC motor control

V_GS= 0 V, I_D= 3mA

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

2.0

4.0 V

V_GS= ±20 V, V_DS= 0

±100nA

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100 mA

2 mA

Advantages

• Easy assembly

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Note 1

6 mW

IXYS reserves the right to change limits, test conditions, and dimensions.

98585A(6/99)

1 - 2

中文翻译

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