Datasheet > IXFR180N085

IXFR180N085

更新时间： 2024-11-22 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	119K
描述
功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFR180N085 数据手册

HiPerFET^TMPower MOSFETs

ISOPLUS247^TM

(Electrically Isolated Back Surface)

IXFR 180N085 V_DSS= 85 V

I_D25= 180 A

R_DS(on)

7 mW

t_rr£ 250 ns

Single MOSFET Die

Preliminary data sheet

ISOPLUS 247^TM

Symbol

TestConditions

MaximumRatings

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_D(RMS)

I_DM

T_C= 25°C (MOSFET chip capability)

Externalleadcurrentlimit

T_C= 25°C, Note 1

180

720

180

Isolated back surface*

D = Drain

I_AR

T_C= 25°C

G = Gate

S = Source

E_AR

E_AS

T_C= 25°C

*Patentpending

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

Features

P_D

T_J

T_C= 25°C

400

• SiliconchiponDirect-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electricalisolation

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

T_L

1.6 mm (0.063 in.) from case for 10 s

300

2500

°C

• Low drain to tab capacitance(<25pF)

• Low R

HDMOS^TMprocess

• Rugge^Dd^Sp^(ooⁿ⁾lysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

V_ISOL

Weight

50/60 Hz, RMS

t = 1 min

• Fast intrinsic Rectifier

Applications

Symbol

V_DSS

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

• DC choppers

V_GS= 0 V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS(th)

I_GSS

2.0

4.0

• AC motor control

V_GS= ±20 V, V_DS= 0

±100

I_DS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

100

Advantages

• Easy assembly

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Note 1

IXYS reserves the right to change limits, test conditions, and dimensions.

98638(7/99)

1 - 2

12 3

中文翻译

下载PDF

与IXFR180N085相关器件

型号	品牌	获取价格	描述	数据表
IXFR180N10	IXYS	获取价格	HiPerFET Power MOSFETs ISOPLUS247
IXFR180N10	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFR180N15P	IXYS	获取价格	PolarHV HiPerFET Power MOSFET ISOPLUS247
IXFR180N15P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFR1810	IXYS	获取价格	Power Field-Effect Transistor, 24A I(D), 500V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IXFR18N90P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFR18N90P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFR200N10P	IXYS	获取价格	PolarTM HiPerFET Power MOSFET
IXFR200N10P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFR200N10P_06	IXYS	获取价格	Polar HiPerFET Power MOSFET